MBRB1045T4G ON Semiconductor, MBRB1045T4G Datasheet

DIODE SCHOTTKY 10A 45V D2PAK

MBRB1045T4G

Manufacturer Part Number
MBRB1045T4G
Description
DIODE SCHOTTKY 10A 45V D2PAK
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet

Specifications of MBRB1045T4G

Voltage - Forward (vf) (max) @ If
840mV @ 20A
Voltage - Dc Reverse (vr) (max)
45V
Current - Average Rectified (io)
10A
Current - Reverse Leakage @ Vr
100µA @ 45V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Product
Schottky Diodes
Peak Reverse Voltage
45 V
Forward Continuous Current
10 A
Max Surge Current
150 A
Configuration
Single Dual Anode
Forward Voltage Drop
0.84 V @ 20 A
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 65 C to + 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBRB1045T4G
MBRB1045T4GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBRB1045T4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MBRB1045T4G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MBRB1045T4G
0
Company:
Part Number:
MBRB1045T4G
Quantity:
12 800
MBRB1045, MBRD1045
SWITCHMODEt
Schottky Power Rectifier
Surface Mount Power Package
principle in a large metal−to−silicon power diode. State−of−the−art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, free wheeling diodes, and
polarity protection diodes.
Features
Mechanical Characteristics:
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 7
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
Peak Repetitive Forward Current
(Rated V
T
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
Operating Junction and Storage
Temperature Range (Note 1)
Voltage Rate of Change (Rated V
This series of Power Rectifiers employs the Schottky Barrier
Leads are Readily Solderable
260°C Max. for 10 Seconds
C
Guardring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Short Heat Sink Tab Manufactured − Not Sheared!
Pb−Free Packages are Available
Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
Weight: 1.7 grams for D
Finish: All External Surfaces Corrosion Resistant and Terminal
Lead and Mounting Surface Temperature for Soldering Purposes:
Device Meets MSL1 Requirements
ESD Ratings: Machine Model, C (>400 V)
Junction−to−Ambient: dP
= 135°C
R
R
) T
, Square Wave, 20 kHz)
0.4 grams for DPAK (approximately)
C
= 135°C
Rating
Human Body Model, 3B (>8000 V)
D
/dT
Preferred Device
2
PAK (approximately)
J
< 1/R
R
)
qJA
.
Symbol
T
V
V
I
dv/dt
I
I
J
F(AV)
FRM
FSM
RWM
V
RRM
, T
R
stg
150 (MBRB)
−65 to +175
70 (MBRD)
10000
Value
45
10
20
1
Unit
V/ms
°C
V
A
A
A
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
10 AMPERES, 45 VOLTS
A
Y
WW
MBRB1045 = Device Code
G
AKA
SCHOTTKY BARRIER
CASE 418B
1 2
CASE 369C
3
PLASTIC
ORDERING INFORMATION
D
DPAK
Y
WW
B1045
G
2
3
PAK
http://onsemi.com
RECTIFIER
1
3
4
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Diode Polarity
4
= Year
= Work Week
= Device Code
= Pb−Free Package
Publication Order Number:
MARKING DIAGRAM
MARKING DIAGRAM
AY WW
MBRB1045G
AKA
4
YWW
MBRB1045/D
45G
B10

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MBRB1045T4G Summary of contents

Page 1

MBRB1045, MBRD1045 Preferred Device SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. ...

Page 2

... Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0% ORDERING INFORMATION Device MBRB1045 MBRB1045G MBRB1045T4 MBRB1045T4G MBRD1045T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Symbol R qJC ...

Page 3

T = 150° 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.4 0.6 0.8 1 INSTANTANEOUS VOLTAGE (VOLTS) F Figure 1. Maximum Forward Voltage 100 70 100°C 50 ...

Page 4

T = 150°C J 125°C 10 100°C 1.0 75°C 0.1 25°C 0.01 0.001 0 5 REVERSE VOLTAGE (VOLTS) R Figure 3. Maximum Reverse Current 200 100 1.0 2.0 ...

Page 5

... −T− SEATING PLANE 0.13 (0.005 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS 2 D PAK 3 CASE 418B−04 ISSUE SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3 ...

Page 6

... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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