MSRF860G ON Semiconductor, MSRF860G Datasheet - Page 3

• Manufacturer Part Number: MSRF860G
• Description: DIODE SOFT REC 600V 8A TO-220FP
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MSRF860G

• Voltage - Forward (vf) (max) @ If: 1.7V @ 8A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 120ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, ITO-220AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

160
140
120
100
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
0
0
8
6
4
2
0
100
100
0
Figure 6. Typical Reverse Recovery Time
Figure 8. Typical Peak Reverse Recovery
RATED V
Figure 4. Current Derating, Ambient
200
200
40
SQUARE WAVE
R
T
A
APPLIED
, AMBIENT TEMPERATURE (°C)
dI
dI
Current
F
F
I
I
/dt (A/mS)
/dt (A/mS)
F
F
300
300
= 16 A
= 16 A
4 A
80
8 A
4 A
dc
TYPICAL ELECTRICAL CHARACTERISTICS
8 A
120
400
400
T
V
T
V
J
R
J
R
= 25°C
= 25°C
= 400 V
= 400 V
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500
500
160
3
16
14
12
10
250
200
150
100
8
6
4
2
0
50
14
12
10
0
0
8
6
4
2
0
100
100
Figure 7. Typical Reverse Recovery Time
Figure 9. Typical Peak Reverse Recovery
2
I
F(AV)
Figure 5. Power Dissipation
, AVERAGE FORWARD CURRENT (AMPS)
200
200
SQUARE WAVE
4
6
dI
dI
Current
F
F
I
I
/dt (A/mS)
/dt (A/mS)
F
F
300
= 16 A
300
8 A
4 A
= 16 A
4 A
8
dc
8 A
10
400
400
T
J
T
V
T
V
= 150°C
J
R
J
R
12
= 125°C
= 125°C
= 400 V
= 400 V
500
500
14