MBRA160T3G ON Semiconductor, MBRA160T3G Datasheet - Page 2

• Manufacturer Part Number: MBRA160T3G
• Description: DIODE SCHOTTKY 60V 1A SMA
• Manufacturer: ON Semiconductor

Specifications of MBRA160T3G

• Voltage - Forward (vf) (max) @ If: 510mV @ 1A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 200µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 2.1 A
• Max Surge Current: 60 A
• Configuration: Single
• Forward Voltage Drop: 0.51 V @ 1 A
• Maximum Reverse Leakage Current: 200 uA
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Rectifier Type: Schottky Diode
• Peak Rep Rev Volt: 60V
• Avg. Forward Curr (max): 2.1A
• Rev Curr: 200uA
• Peak Non-repetitive Surge Current (max): 60A
• Forward Voltage: 0.51V
• Operating Temp Range: -55C to 125C
• Package Type: SMA
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBRA160T3GOSTR

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Average Rectified Forward Current
Non−Repetitive Peak Surge Current
Storage/Operating Case Temperature
Operating Junction Temperature (Note 1)
Voltage Rate of Change
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Maximum Instantaneous Forward Voltage (Note 3)
Maximum Instantaneous Reverse Current
(At Rated V
(At Rated V
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
(Rated V
R
, T
R
R
, T
, T
J
= 25°C)
C
C
= 105°C)
= 70°C)
Characteristic
Rating
http://onsemi.com
(I
(V
F
R
= 1.0 A)
= 60 V)
2
Symbol
Symbol
T
V
V
stg
dv/dt
I
R
R
FSM
RWM
RRM
V
V
T
I
I
I
qJA
qJL
O
O
R
, T
R
J
F
C
D
T
T
/dT
J
J
0.510
= 25°C
= 25°C
0.2
J
< 1/R
−55 to +150
−55 to +150
10,000
Value
Value
qJA
1.0
2.1
60
60
35
86
.
T
T
J
J
0.475
= 125°C
= 125°C
20
°C/W
Unit
V/ms
Unit
mA
°C
°C
V
A
A
A
V