MURA210T3G ON Semiconductor, MURA210T3G Datasheet - Page 3

• Manufacturer Part Number: MURA210T3G
• Description: DIODE ULTRA FAST 2A 100V SMA
• Manufacturer: ON Semiconductor

Specifications of MURA210T3G

• Voltage - Forward (vf) (max) @ If: 940mV @ 2A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 2µA @ 100V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 100 V
• Forward Voltage Drop: 0.94 V
• Recovery Time: 30 ns
• Forward Continuous Current: 2 A
• Max Surge Current: 50 A
• Reverse Current Ir: 2 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MURA210T3GOSTR

3.5
2.5
1.5
0.5
50
45
30
25
20
15
10
40
35
5
0
4
3
2
1
0
100
0
SQUARE WAVE
dc
4
110
Figure 7. Current Derating, Lead
8
V
Figure 5. Typical Capacitance
120
R
T
, REVERSE VOLTAGE (VOLTS)
L
12
, LEAD TEMPERATURE (°C)
130
16
140
2.5
1.5
0.5
20
2
1
0
NOTE: TYPICAL
CAPACITANCE AT
0 V = 45 pF
0
24
150
R
T
I
J
F(AV)
qJL
= 175°C
0.5
28
= 24°C/W
, AVERAGE FORWARD CURRENT (AMPS)
MURA205T3, MURA210T3
160
Figure 9. Power Dissipation
32
SQUARE WAVE
1
170
http://onsemi.com
36
1.5
180
40
T
3
J
= 175°C
2
1.5
0.5
60
50
40
30
20
10
0
1
0
0
0
SQUARE
2.5
WAVE
4
dc
20
Figure 8. Current Derating, Ambient
dc
Figure 6. Maximum Capacitance
(FR−4 Board with Minimum Pad)
3
8
V
40
T
A
R
, AMBIENT TEMPERATURE (°C)
, REVERSE VOLTAGE (VOLTS)
12
3.5
60
16
80
20
100
NOTE: MAXIMUM
CAPACITANCE AT
0 V = 48 pF
24
120
R
T
J
qJA
28
= 175°C
= 216°C/W
140
32
160
36
40