CMH08(TE12L,Q) Toshiba, CMH08(TE12L,Q) Datasheet - Page 3

DIODE HI EFF 400V 2A M-FLAT

CMH08(TE12L,Q)

Manufacturer Part Number
CMH08(TE12L,Q)
Description
DIODE HI EFF 400V 2A M-FLAT
Manufacturer
Toshiba
Datasheet

Specifications of CMH08(TE12L,Q)

Voltage - Forward (vf) (max) @ If
1.3V @ 2A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
10µA @ 400V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Surface Mount
Package / Case
3-4E1A (M-Flat)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
0.01
0.1
100
160
140
120
100
10
80
60
40
20
1
0.4
0
0
Pulse test
Rectangular
0.2
Waveform
180°
Instantaneous forward voltage v
360°
Average forward current I
0.8
0.4 0.6
75°C
1000
500
300
100
50
30
10
0.001
5
3
1
150°C
0.8
Tℓ max – I
1.2
T j = 25°C
1.0
i
F
0.003
– v
1.6
1.2 1.4
F
F (AV)
0.01
F (AV)
2.0
1.6 1.8 2.0
F
0.03
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land: 2.1 mm × 1.4 mm
board thickness: 1.6 t
(A)
Device mounted on a ceramic board:
board size: 50 mm × 50 mm
Soldering land: 2.0 mm × 2.0 mm
board thickness: 0.64 t
(V)
2.4
0.1
2.2
0.3
Time t (s)
r
th (j-a)
3
1
– t
3
160
140
120
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land: 6.0 mm × 6.0 mm
board thickness: 1.6 t
80
60
40
20
0
0
0
0
10
0.2
Rectangular
0.2 0.4 0.6
Waveform
180°
360°
Average forward current I
0.4
Average forward current I
30
0.6
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land: 6.0 mm × 6.0 mm
board thickness: 1.6 t
100
0.8
P
0.8 1.0
Ta max – I
F (AV)
1.0
300
– I
1.2
1.2
F (AV)
F (AV)
1.4
1000
1.4
F (AV)
F (AV)
1.6
1.6
Rectangular
Waveform
180°
360°
1.8 2.0
1.8
(A)
(A)
2004-06-07
2.0
CMH08
2.2
2.2

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