DPG60I400HA IXYS, DPG60I400HA Datasheet - Page 4

• Manufacturer Part Number: DPG60I400HA
• Description: DIODE HFRED 400V 60A TO-247
• Manufacturer: IXYS
• Series: HiPerFRED™r

Specifications of DPG60I400HA

• Voltage - Forward (vf) (max) @ If: 1.47V @ 60A
• Voltage - Dc Reverse (vr) (max): 400V
• Current - Average Rectified (io): 60A
• Current - Reverse Leakage @ Vr: 1µA @ 400V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 45ns
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247
• Product: Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 400 V
• Forward Voltage Drop: 1.8 V at 120 A
• Recovery Time: 45 ns
• Forward Continuous Current: 60 A
• Max Surge Current: 450 A
• Reverse Current Ir: 1 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Vrrm, (v): 400
• Ifavm, D = 0.5, Total, (a): 60
• Ifavm, D = 0.5, Per Diode, (a): 60
• @ Tc, (°c): 120
• Ifrms, (a): 70
• Ifsm, 10 Ms, Tvj=45°c, (a): 450
• Vf, Max, Tvj =150°c, (v): 1.22
• @ If, (a): 60
• Trr, Typ, Tvj =25°c, (ns): 45
• Irm , Typ, Tvj =100°c, (a): 9.5
• @ -di/dt, (a/µs): 200
• Tvjm, (°c): 175
• Rthjc, Max, (k/w): 0.55
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Details

IXYS reserves the right to change limits, conditions and dimensions.
©
[A]
K
[µJ]
E
I
F
2010 IXYS all rights reserved
f
rec
120
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
40
30
20
10
80
60
40
20
0
0.0
0
0
Fig. 7 Typ. recovery energy
Fig. 1 Forward current I
Fig. 4 Dynamic parameters
I
F
I
Q
RM
0.4
= 120 A
T
rr
VJ
40
E
forward voltage V
Q
60 A
30 A
= 150°C
rec
200
rr
-di
, I
0.8
versus -di
T
RM
F
VJ
V
/dt [A/µs]
80
F
[°C]
versus T
[V]
1.2
T
V
400
VJ
R
25°C
= 125°C
F
120
= 270 V
/dt
1.6
VJ
F
F
versus
160
600
2.0
[K/W]
[µC]
[ns]
Z
Q
t
rr
thJC
rr
110
100
Fig. 2 Typ. reverse recovery charge
1.0
0.1
1.0
0.8
0.6
0.4
0.2
0.0
90
80
70
60
50
10
0
0
Fig. 5 Typ. reverse recovery time
Fig. 8 Transient thermal impedance junction to case
0
I
I
F
Q
F
= 120 A
= 120 A
rr
t
versus -di
rr
60 A
30 A
200
200
60 A
30 A
versus -di
Data according to IEC 60747and per diode unless otherwise specified
-di
-di
F
F
/dt [A/µs]
/dt [A/µs]
F
10
T
V
T
V
/dt
VJ
400
VJ
400
R
R
F
1
/dt
= 125°C
= 125°C
= 270 V
= 270 V
600
600
[ns]
t [ms]
10
t
I
[A]
fr
RM
2
1200
1100
1000
900
800
700
600
500
400
300
200
Fig. 6 Typ. forward recovery voltage V
22
20
18
16
14
12
10
8
6
4
0
Fig. 3 Typ. reverse recovery current
0
& forward recovery time t
t
I
fr
DPG 60 I 400 HA
F
= 120 A
I
RM
60 A
30 A
200
200
-di
-di
T
V
I
F
10
VJ
versus -di
R
F
F
/dt [A/µs]
= 125°C
/dt [A/µs]
3
= 270 V
= 60 A
T
V
VJ
400
400
R
= 125°C
F
= 270 V
/dt
V
fr
FR
vs. di
600
600
10
20100128a
4
12
11
10
9
8
7
6
5
4
3
2
F
V
[V]
/dt
FR
FR