BAS17,215 NXP Semiconductors, BAS17,215 Datasheet - Page 4

• Manufacturer Part Number: BAS17,215
• Description: DIODE STABISTOR 5V 200MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAS17,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 960mV @ 100mA
• Voltage - Dc Reverse (vr) (max): 5V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 5µA @ 4V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Capacitance @ Vr, F: 140pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Voltage Temperature Coefficient: - 1.8 mV / K
• Power Dissipation: 250 mW
• Maximum Reverse Leakage Current: 5 uA
• Maximum Zener Impedance: 120 Ohms
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933526230215; BAS17 T/R; BAS17 T/R

NXP Semiconductors
GRAPHICAL DATA
2003 Mar 25
handbook, halfpage
Low-voltage stabistor
T
(1) Minimum values.
(2) Maximum values.
Fig.2
j
(mA)
= 25 °C.
10
I F
10
10
−1
1
2
0.5
Forward current as a function of forward
voltage.
(1)
0.75
(2)
V F (V)
MBG517
1.0
4
Product data sheet
BAS17