RF101A2ST-32 Rohm Semiconductor, RF101A2ST-32 Datasheet
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Manufacturer Part Number
RF101A2ST-32
Description
DIODE FAST REC 200V 1.0A DO-41
Manufacturer
Rohm Semiconductor
Specifications of RF101A2ST-32
Voltage - Forward (vf) (max) @ If
870mV @ 1A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
10µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
25ns
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
0.87 V
Recovery Time
25 ns
Forward Continuous Current
1 A
Max Surge Current
20 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Details
Other names
RF101A2ST-32TB
Diodes
Fast recovery diode
RF101A2S
General rectification
1) Cylindrical mold type. (MSR)
2) Ultra Low V
3) Ultra high switching.
4) Low switching loss.
5) High ESD.
Silicon epitaxial planar
Forward voltage
Reverse current
Reverse recovery time
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current(*1)
Forward current surge peak （60Hz・1cyc）
Junction temperature
Storage temperature
(*1)Mounting on epoxi board. 180°Half sine wave
Features
Construction
Electrical characteristic (Ta=25°C)
Applications
Absolute maximum ratings (Ta=25°C)
Parameter
F.
Parameter
Symbol
V
trr
I
R
F
Taping specifications (Unit : mm)
Dimensions (Unit : mm)
Min.
ROHM : MSR
-
-
-
注) 累積ピッチの許容差は20ピッチで±1.5mm以下とする
①
H1
cf : cumulative pitch tolerance w ith 20 pitch than ±1.5mm
H2
Symbol
Tstg
V
I
V
FSM
Io
Tj
RM
0.815
R
Typ.
0.01
②
12
29±1
BLUE
L1
Manufacture Date
A
Max.
0.87
10
25
-55 to +150
F
3.0±0.2
Limits
E
L2
200
200
150
20
CATHODE BAND
1
Unit
µA
ns
V
H1
H2
I
I
V
F
F
C
=0.5A,I
=1.0A
R
(BLUE)
29±1
=200V
φ0.6±0.1
D
B
IVORY
Conditions
R
＊H1(6mm)：BROWN
Unit
=1A,Irr=0.25*I
℃
℃
V
V
A
A
記号
Mark
Ａ
Ｂ
Ｃ
Ｄ
Ｅ
Ｆ
H1
H2
L1-L2
Rev.C
RF101A2S
T-31 52.4±1.5
T-32 26.0+0.4
寸法規格値(mm)
Stabdard dimension
value (mm)
φ2.5±0.2
5.0±0.5
0.5ＭＡＸ
50.4±0.4
0.3ＭＡＸ
6.0±0.5
5.0±0.5
0.6ＭＡＸ
0
-0
R
1/3
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RF101A2ST-32 Summary of contents
Diodes Fast recovery diode RF101A2S Applications General rectification Features 1) Cylindrical mold type. (MSR) 2) Ultra Low Ultra high switching. 4) Low switching loss. 5) High ESD. Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Reverse ...
Diodes Electrical characteristic curves 1 Ta=150℃ 0.1 Ta=125℃ Ta=75℃ 0.01 Ta=25℃ Ta=-25℃ 0.001 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 850 Ta=25℃ IF=1A 840 n=30pcs 830 820 AVE:818.6mV 810 800 VF DISPERSION MAP ...
Diodes D=t/ D=t/T VR=100V T 2 Tj=150℃ D=1/2 1 Sin(θ＝180 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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