BAS29,215 NXP Semiconductors, BAS29,215 Datasheet - Page 7
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BAS29,215
Manufacturer Part Number
BAS29,215
Description
DIODE SW 110V 250MA SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.BAS31215.pdf
(9 pages)
Specifications of BAS29,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Current - Reverse Leakage @ Vr
100nA @ 90V
Voltage - Forward (vf) (max) @ If
1V @ 200mA
Voltage - Dc Reverse (vr) (max)
90V
Capacitance @ Vr, F
35pF @ 0V, 1MHz
Current - Average Rectified (io)
250mA (DC)
Product
General Purpose Diodes
Peak Reverse Voltage
110 V
Forward Continuous Current
0.25 A
Max Surge Current
10 A
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933723180215::BAS29 T/R::BAS29 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS29,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
PACKAGE OUTLINE
2003 Mar 20
Plastic surface mounted package; 3 leads
General purpose controlled avalanche
(double) diodes
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
scale
B
EIAJ
1
7
2.5
2.1
H
E
0.45
0.15
L
A
p
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
BAS29; BAS31; BAS35
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
c
Product data sheet
X
v
ISSUE DATE
M
97-02-28
99-09-13
A
SOT23