BAS16-G Comchip Technology, BAS16-G Datasheet - Page 2

• Manufacturer Part Number: BAS16-G
• Description: DIODE 75V 200MA SOT23
• Manufacturer: Comchip Technology

Specifications of BAS16-G

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 6ns
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.FR–5 = 1.0 X 0.75 X 0.062 in.
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
OFF CHARACTERISTICS
MDS0212004A
Surface Mount Switching Diode
Reverse Voltage Leakage Current
Reverse Breakdown Voltage
Forward Voltage
Diode Capacitance
Forward Recovery Voltage
Reverse Recovery Time
Stored Charge
(V R = 75 Vdc)
(V R = 75 Vdc, T J = 150°C)
(V R = 25 Vdc, T J = 150°C)
(I BR = 100 µAdc)
(I F = 1.0 mAdc)
(I F = 10 mAdc)
(I F = 50 mAdc)
(I F = 150 mAdc)
(V R = 0, f = 1.0 MHz)
(I F = 10 mAdc, t r = 20 ns)
(I F = I R = 10 mAdc, R L = 50 Ω)
(I F = 10 mAdc to V R = 5.0 Vdc, R L = 500 Ω)
Characteristic
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Symbol
V (BR)
V FR
C D
Q S
V F
I R
t rr
Min
75
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COMCHIP
COMCHIP
www.comchip.com.tw
1000
1250
Max
1.75
715
855
1.0
2.0
6.0
50
30
—
45
Page 2
µAdc
Unit
Vdc
Vdc
mV
pC
pF
ns