BAS70,235 NXP Semiconductors, BAS70,235 Datasheet - Page 7
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BAS70,235
Manufacturer Part Number
BAS70,235
Description
DIODE SCHOTTKY 70V 70MA SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.BAS70-04215.pdf
(20 pages)
Specifications of BAS70,235
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1V @ 15mA
Voltage - Dc Reverse (vr) (max)
70V
Current - Average Rectified (io)
70mA (DC)
Current - Reverse Leakage @ Vr
10µA @ 70V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
70 V
Forward Continuous Current
0.07 A
Max Surge Current
0.1 A
Configuration
Single
Forward Voltage Drop
1 V @ 0.015 A
Maximum Reverse Leakage Current
10 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934020790235
BAS70 /T3
BAS70 /T3
BAS70 /T3
BAS70 /T3
NXP Semiconductors
BAS70_1PS7XSB70_SER_9
Product data sheet
Fig 1.
Fig 3.
(mA)
(1) T
(2) T
(3) T
(4) T
r
(Ω)
10
10
dif
I
10
10
10
F
10
10
−1
−2
1
10
1
2
3
2
Forward current as a function of forward
voltage; typical values
f = 10 kHz
forward current; typical values
Differential forward resistance as a function of
0
−1
amb
amb
amb
amb
(1)
= 125 °C
= 85 °C
= 25 °C
= −40 °C
(2)
0.2
(3)
1
(4)
0.4
0.6
10
I
0.8
F
(mA)
V
BAS70 series; 1PS7xSB70 series
mra803
mra802
F
(V)
Rev. 09 — 13 January 2010
10
1
2
Fig 2.
Fig 4.
(μA)
(1) T
(2) T
(3) T
(pF)
10
10
10
I
C
R
10
1.5
0.5
10
d
−1
−2
−3
2
1
0
1
2
0
0
Reverse current as a function of reverse
voltage; typical values
T
Diode capacitance as a function of reverse
voltage; typical values
amb
amb
amb
amb
= 125 °C
= 85 °C
= 25 °C
= 25 °C; f = 1 MHz
20
20
General-purpose Schottky diodes
(3)
(1)
(2)
40
40
60
60
© NXP B.V. 2010. All rights reserved.
V
V
R
R
mra805
mra804
(V)
(V)
80
80
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