1N3766 Vishay, 1N3766 Datasheet - Page 2

DIODE STD REC 800V 35A DO-5

1N3766

Manufacturer Part Number
1N3766
Description
DIODE STD REC 800V 35A DO-5
Manufacturer
Vishay
Datasheet

Specifications of 1N3766

Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.8V @ 110A
Voltage - Dc Reverse (vr) (max)
800V
Current - Average Rectified (io)
35A
Current - Reverse Leakage @ Vr
4mA @ 800V
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Chassis, Stud Mount
Package / Case
DO-203AB, DO-5, Stud
Repetitive Reverse Voltage Vrrm Max
800V
Forward Current If(av)
35A
Forward Voltage Vf Max
1.8V
Forward Surge Current Ifsm Max
400A
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
800 V
Forward Voltage Drop
1.8 V at 110 A
Forward Continuous Current
35 A
Max Surge Current
400 A
Reverse Current Ir
4000 uA
Mounting Style
Stud
Maximum Operating Temperature
+ 190 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
 Details
Other names
*1N3766
VS-1N3766
VS-1N3766
VS1N3766
VS1N3766
1N1183, 1N3765, 1N1183A, 1N2128A Series
Vishay High Power Products
Notes
(1)
(2)
www.vishay.com
2
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum peak one cycle
non-repetitive surge current
Maximum I
Maximum I
device fusing
Maximum I
device fusing
Maximum peak forward voltage
at maximum forward current (I
Maximum average
reverse current
JEDEC registered values
I
2
t for time t
2
2
2
t for fusing
t for individual
√t for individual
x
= I
2
√t x √t
V
V
V
V
RRM
RRM
RRM
RRM
x
= 1000
= 700
= 800
= 900
FM
)
SYMBOL
I
I
I
2
I
F(AV)
V
R(AV)
FSM
√t
I
For technical questions, contact:
2
FM
t
(2)
1-phase operation,
180° sinusoidal conduction
Half cycle 50 Hz
sine wave or 6 ms
rectangular pulse
Half cycle 60 Hz
sine wave or 5 ms
rectangular pulse
Half cycle 50 Hz
sine wave or 6 ms
rectangular pulse
Half cycle 60 Hz
sine wave or 5 ms
rectangular pulse
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms,
V
T
Maximum rated I
Maximum rated I
RRM
J
= 25 °C
Power Silicon Rectifier Diodes,
= 0 following surge
TEST CONDITIONS
35 A/40 A/60 A
F(AV)
F(AV)
Following any
rated load
condition and
with rated
V
Following any
rated load
condition and
with ½ V
applied following
surge = 0
With rated V
applied following
surge, initial
T
With V
following surge,
initial T
T
, V
and T
J
J
RRM
= T
maximum
RRM
ind-modules@vishay.com
applied
J
RRM
C
J
maximum
and T
RRM
=
= 0
RRM
C
1N1183 1N3765 1N1183A 1N2128A
16 100
140
500
1.7
35
1140
1040
1610
1470
10
480
570
595
110
-
-
-
-
(1)
(1)
(1)
(1)
(1)
10 300
140
400
1.8
5.0
4.0
3.0
2.0
35
1030
380
455
475
730
670
940
110
-
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
41 500
150
800
1.3
2.5
40
2900
2650
4150
3750
765
910
950
126
-
-
-
-
(1)
(1)
(1)
Document Number: 93492
(1)
(1)
Revision: 25-May-09
52 500
140
900
1.3
60
1000
1050
3700
3400
5250
4750
10
860
188
-
-
-
-
(1)
(1)
(1)
(1)
(1)
UNITS
A
A
mA
°C
2
A
A
V
A
2
√s
s

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