BY229B-600-E3/81 Vishay, BY229B-600-E3/81 Datasheet - Page 3
![DIODE 8A 600V 145NS TO-263AB](/photos/5/29/52982/vishay-d2pak_sml.jpg)
BY229B-600-E3/81
Manufacturer Part Number
BY229B-600-E3/81
Description
DIODE 8A 600V 145NS TO-263AB
Manufacturer
Vishay
Datasheet
1.BY229B-200-E345.pdf
(5 pages)
Specifications of BY229B-600-E3/81
Voltage - Forward (vf) (max) @ If
1.85V @ 20A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
8A
Current - Reverse Leakage @ Vr
10µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
145ns
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Product
Fast Recovery Rectifier
Configuration
Single Dual Cathode
Reverse Voltage
600 V
Forward Voltage Drop
1.85 V at 20 A
Recovery Time
145 ns
Forward Continuous Current
8 A
Max Surge Current
100 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BY229B-600-E3/45
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88540
Revision: 06-Nov-07
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
A
= 25 °C unless otherwise noted)
Figure 3. Typical Instantaneous Forward Characteristics
150
125
100
100
75
50
25
0.1
12
10
10
8
6
4
2
0
0
1
0.4
1
0
Figure 1. Forward Current Derating Curve
0.6
25
Instantaneous Forward Voltage (V)
Case Ambient Temperature (°C)
0.8
Number of Cycles at 60 Hz
T
J
= 150 °C
50
1.0
T
J
= 125 °C
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
T
8.3 ms Single Half Sine-Wave
Resistive or Inductive Load
L
For technical questions within your region, please contact one of the following:
75
10
1.2
= 75 °C
T
J
Pulse Width = 300 µs
1 % Duty Cycle
= 100 °C
1.4
100
1.6
T
J
= 25 °C
125
1.8
150
100
2.0
BY229(X,B)-200 thru BY229(X,B)-800
1000
100
0.01
100
10
0.1
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
Percent of Rated Peak Reverse Voltage (%)
T
J
= 150 °C
20
T
J
Reverse Voltage (V)
= 25 °C
T
T
J
40
J
= 100 °C
= 125 °C
10
60
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
80
www.vishay.com
100
100
3