MBR1645-E3/45 Vishay, MBR1645-E3/45 Datasheet - Page 3

• Manufacturer Part Number: MBR1645-E3/45
• Description: DIODE SCHOTT 16A 45V SGL TO220-3
• Manufacturer: Vishay

Specifications of MBR1645-E3/45

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 630mV @ 16A
• Voltage - Dc Reverse (vr) (max): 45V
• Current - Average Rectified (io): 16A
• Current - Reverse Leakage @ Vr: 200µA @ 45V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Schottky Diodes
• Peak Reverse Voltage: 45 V
• Forward Continuous Current: 16 A
• Max Surge Current: 150 A
• Configuration: Single
• Forward Voltage Drop: 0.63 V
• Maximum Reverse Leakage Current: 200 uA
• Operating Temperature Range: - 65 C to + 150 C
• Mounting Style: Through Hole
• Repetitive Reverse Voltage Vrrm Max: 45V
• Forward Current If(av): 16A
• Forward Voltage Vf Max: 570mV
• Forward Surge Current Ifsm Max: 1.8kA
• Rectifier Type: Schottky Diode
• Peak Rep Rev Volt: 45V
• Avg. Forward Curr (max): 16A
• Rev Curr: 200uA
• Peak Non-repetitive Surge Current (max): 150A
• Forward Voltage: 0.63V
• Operating Temp Range: -65C to 150C
• Package Type: TO-220AC
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Document Number: 88671
Revision: 08-Nov-07
0.001
Figure 3. Typical Instantaneous Forward Characteristics
0.01
100
0.01
100
0.1
0.1
10
10
1
1
0
0
T
Figure 4. Typical Reverse Characteristics
J
Percent of Rated Peak Reverse Voltage (%)
= 150 °C
0.2
MBR1635 - MBR1645
MBR1650 - MBR1660
Instantaneous Forward Voltage (V)
20
0.4
T
J
40
= 25 °C
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0.6
For technical questions within your region, please contact one of the following:
Pulse Width = 300 µs
1 % Duty Cycle
60
MBR1635 - MBR1645
MBR1650 - MBR1660
T
T
T
0.8
J
J
J
= 125 °C
= 75 °C
= 25 °C
80
1.0
100
1.2
MBR(F,B)1635 thru MBR(F,B)1660
10 000
1000
100
100
0.1
10
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
MBR1635 - MBR1645
MBR1650 - MBR1660
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
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100
100
3