10MQ040NTR Vishay, 10MQ040NTR Datasheet - Page 2

DIODE SCHOTTKY 40V 1.5A D-64

10MQ040NTR

Manufacturer Part Number
10MQ040NTR
Description
DIODE SCHOTTKY 40V 1.5A D-64
Manufacturer
Vishay
Datasheet

Specifications of 10MQ040NTR

Voltage - Forward (vf) (max) @ If
540mV @ 1A
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
1.5A
Current - Reverse Leakage @ Vr
500µA @ 40V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Product
Schottky Rectifiers
Peak Reverse Voltage
40 V
Forward Continuous Current
1.5 A
Max Surge Current
120 A
Configuration
Single
Forward Voltage Drop
0.62 V
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 55 C to + 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
Other names
VS-10MQ040NTR
VS-10MQ040NTR
VS10MQ040NTR
VS10MQ040NTR

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Document Number: 94117
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
Absolute Maximum Ratings
Electrical Specifications
Thermal-Mechanical Specifications
Voltage Ratings
I
I
E
I
T
T
R
wt
(*) dPtot
V
V
V
I
V
r
C
L
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle < 2%
F(AV)
FSM
AR
RM
t
S
J
stg
R
RWM
AS
FM
F(TO)
T
thJA
dTj
Parameters
Parameters
Max. Junction Temperature Range (*) - 55 to 150
Max. Storage Temperature Range
Max. Thermal Resistance Junction
to Ambient
Approximate Weight
Case Style
Device Marking
Max. Average Forward Current
* See Fig. 4
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 6
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
Parameters
Part number
Max. DC Reverse Voltage (V)
Max. Working Peak Reverse Voltage (V)
Max. Forward Voltage Drop
* See Fig. 1
Max. Reverse Leakage Current (1)
* See Fig. 2
Threshold Voltage
Forward Slope Resistance
Typical Junction Capacitance
Typical Series Inductance
(Rated V
<
Rth( j-a)
1
R
)
thermal runaway condition for a diode on its own heatsink
(1)
0.07(0.002) g (oz.)
- 55 to 150
10MQ Units
10MQ
10MQ Units
10000
0.54
0.62
0.49
0.56
0.36
120
104
1.5
3.0
1.0
0.5
2.0
30
26
38
80
SMA
IR1F
Units
°C/W DC operation
V/µs
mΩ
mJ
mA
mA
nH
pF
°C
°C
A
A
A
V
V
V
V
V
50% duty cycle @ T
On PC board 9mm
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
T
Similar D-64
@ 1A
@ 1.5A
@ 1A
@ 1.5A
T
T
T
V
Measured lead to lead 5mm from package body
J
J
J
J
R
= 25 °C, I
= 25 °C
= 125 °C
= T
= 10V
J
max.
DC
AS
, T
Conditions
= 1A, L = 6mH
Conditions
Conditions
J
= 25°C, test signal = 1Mhz
2
T
T
V
10MQ040NPbF
island(.013mm thick copper pad area)
J
J
R
L
= 123 °C, rectangular wave form.
= 25 °C
= 125 °C
= rated V
40
R
Following any rated
load condition and
with rated V
www.vishay.com
RRM
applied
2

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