UH6PJ-M3/86A Vishay, UH6PJ-M3/86A Datasheet - Page 3

• Manufacturer Part Number: UH6PJ-M3/86A
• Description: DIODE 6A 600V 25NS PLANAR TO277A
• Manufacturer: Vishay
• Series: eSMP™r

Specifications of UH6PJ-M3/86A

• Voltage - Forward (vf) (max) @ If: 3V @ 6A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 6A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 45ns
• Mounting Type: Surface Mount
• Package / Case: TO-277A (SMPC)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single Dual Anode
• Reverse Voltage: 600 V
• Forward Voltage Drop: 3 V
• Recovery Time: 45 ns
• Forward Continuous Current: 6 A
• Max Surge Current: 80 A
• Reverse Current Ir: 10 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
Document Number: 89069
Revision: 24-Nov-09
(T
A
= 25 °C unless otherwise noted)
100
0.01
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
10
10
8
6
4
2
7
6
5
4
3
2
1
0
Fig. 1 - Maximum Forward Current Derating Curve
0
1
0
0
0
Fig. 2 - Forward Power Loss Characteristics
Resistive or Inductive Load
T
at the Cathode Band Terminal
L
T
0.4
25
Measured
1
A
Instantaneous Forward Voltage (V)
= 125 °C
T
A
Average Forward Current (A)
= 150 °C
D = 0.1
0.8
50
Lead Temperature (°C)
2
D = 0.2
T
A
= 175 °C
1.2
[e-mail], [e-mail],
75
3
D = 0.3
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100
1.6
D = 0.5
4
T
A
= 25 °C
125
T
2.0
5
A
D = 0.8
= 100 °C
D = 1.0
150
2.4
6
175
2.8
7
1000
0.01
100
100
0.1
10
10
1
0.1
10
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Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
20
Fig. 5 - Typical Junction Capacitance
T
A
= 25 °C
30
T
A
T
A
= 150 °C
Reverse Voltage (V)
40
1
= 175 °C
T
A
50
= 125 °C
T
A
= 100 °C
60
10
70
T
f = 1.0 MHz
V
J
sig
= 25 °C
80
= 50 mV
90
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p-p
UH6PJ
100
100
3