MURS120-E3/52T Vishay, MURS120-E3/52T Datasheet - Page 3

• Manufacturer Part Number: MURS120-E3/52T
• Description: DIODE ULTRA FAST 1A 200V SMB
• Manufacturer: Vishay

Specifications of MURS120-E3/52T

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 875mV @ 1A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 2µA @ 200V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 0.875 V @ 1 A
• Recovery Time: 35 ns
• Forward Continuous Current: 2 A
• Max Surge Current: 40 A
• Reverse Current Ir: 2 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Repetitive Reverse Voltage Vrrm Max: 200V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 710mV
• Reverse Recovery Time Trr Max: 25ns
• Forward Surge Current Ifsm Max: 40A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MURS120-E3/52TGITR

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88687
Revision: 27-Aug-07
0.001
Figure 3. Typical Instantaneous Forward Characteristics
0.01
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.2
0
Percent of Rated Peak Reverse Voltage (%)
T
J
0.4
= 125 °C
Instantaneous Forward Voltage (V)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
20
0.060 (1.52)
0.030 (0.76)
0.6
T
J
40
= 175 °C
0.8
T
[e-mail], [e-mail], [e-mail]
J
= 25 °C
For technical questions within your region, please contact one of the following:
T
J
T
1.0
DO-214AA (SMB)
= 100 °C
J
60
= 100 °C
0.180 (4.57)
0.160 (4.06)
0.220 (5.59)
0.205 (5.21)
Cathode Band
1.2
T
J
0.008 (0.2)
80
= 25 °C
1.4
0 (0)
100
1.6
0.155 (3.94)
0.130 (3.30)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52) MIN.
0.086 (2.18) MIN.
1000
100
10
0.1
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
Mounting Pad Layout
0.220 REF.
Reverse Voltage (V)
1
0.085 (2.159) MAX.
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
MURS120
www.vishay.com
100
3