SBYV28-100-E3/73 Vishay, SBYV28-100-E3/73 Datasheet - Page 3
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SBYV28-100-E3/73
Manufacturer Part Number
SBYV28-100-E3/73
Description
DIODE 3.5A 100V 20NS DO-201AD
Manufacturer
Vishay
Datasheet
1.SBYV28-100-E373.pdf
(4 pages)
Specifications of SBYV28-100-E3/73
Voltage - Forward (vf) (max) @ If
1.1V @ 3.5A
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
3.5A
Current - Reverse Leakage @ Vr
5µA @ 100V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
20ns
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Product
Ultra Fast Recovery Rectifier
Reverse Voltage
100 V
Forward Voltage Drop
1.1 V
Recovery Time
20 ns
Forward Continuous Current
3.5 A
Max Surge Current
90 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88737
Revision: 22-Oct-09
1000
0.01
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
100
0.1
0.1
10
10
1
1
0.4
Fig. 4 - Typical Reverse Leakage Characteristics
0
Percent of Rated Peak Reverse Voltage (%)
0.6
Instantaneous Forward Voltage (V)
20
T
J
0.8
= 100 °C
Pulse Width = 300 μs
1 % Duty Cycle
40
1.0
T
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
J
= 25 °C
For technical questions within your region, please contact one of the following:
T
T
1.2
J
J
60
= 100 °C
= 25 °C
1.4
80
1.6
100
1.8
0.210 (5.3)
0.190 (4.8)
0.052 (1.32)
0.048 (1.22)
DIA.
DIA.
DO-201AD
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
1.0 (25.4)
SBYV28-50 thru SBYV28-200
100
MIN.
MIN.
60
50
40
30
20
10
10
0
1
0.1
0
DiodesEurope@vishay.com
Vishay General Semiconductor
Fig. 5 - Reverse Switching Characteristics
I
V
F
R
Fig. 6 - Typical Junction Capacitance
= 4.0 A
= 30 V
25
Junction Temperature (°C)
50
Reverse Voltage (V)
1
75
100
10
125
V
dI/dt = 150 A/μs
dI/dt = 100 A/μs
dI/dt = 100 A/μs
dI/dt = 150 A/μs
dI/dt = 20 A/μs
dI/dt = 50 A/μs
dI/dt = 50 A/μs
dI/dt = 20 A/μs
sig
f = 1.0 MHz
T
J
= 50 mV
= 25 °C
150
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t
Q
rr
p-p
rr
100
175
3