ES2AHE3/52T Vishay, ES2AHE3/52T Datasheet - Page 3

• Manufacturer Part Number: ES2AHE3/52T
• Description: DIODE 2A 50V 20NS DO-214AA SMB
• Manufacturer: Vishay

Specifications of ES2AHE3/52T

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 900mV @ 2A
• Voltage - Dc Reverse (vr) (max): 50V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Repetitive Reverse Voltage Vrrm Max: 50V
• Forward Current If(av): 2A
• Forward Voltage Vf Max: 900mV
• Reverse Recovery Time Trr Max: 20ns
• Forward Surge Current Ifsm Max: 50A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88587
Revision: 27-Aug-07
10 000
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.2
0
Percent of Rated Peak Reverse Voltage (%)
T
J
0.4
= 125 °C
Instantaneous Forward Voltage (V)
20
T
J
0.6
= 150 °C
T
T
J
J
40
= 125 °C
= 25 °C
0.096 (2.44)
0.084 (2.13)
0.077 (1.95)
0.086 (2.20)
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T
0.060 (1.52)
0.030 (0.76)
J
For technical questions within your region, please contact one of the following:
0.8
= 25 °C
T
T
J
J
60
= 150 °C
= 100 °C
T
J
1.0
= 100 °C
DO-214AA (SMB)
80
1.2
0.220 (5.59)
0.205 (5.21)
0.180 (4.57)
0.160 (4.06)
Cathode Band
100
1.4
0.008 (0.2)
0 (0)
0.155 (3.94)
0.130 (3.30)
0.012 (0.305)
0.006 (0.152)
0.060 MIN.
(1.52 MIN.)
(2.18 MIN.)
0.086 MIN.
60
50
40
30
20
10
0
0.1
Vishay General Semiconductor
Mounting Pad Layout
Figure 5. Typical Junction Capacitance
0.220 REF.
Reverse Voltage (V)
1
(2.159 MAX.)
0.085 MAX.
ES2A thru ES2D
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
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100
3