SBYV27-200-E3/73 Vishay, SBYV27-200-E3/73 Datasheet - Page 3

DIODE SOFT REC 2A 200V DO-15

SBYV27-200-E3/73

Manufacturer Part Number
SBYV27-200-E3/73
Description
DIODE SOFT REC 2A 200V DO-15
Manufacturer
Vishay
Datasheet

Specifications of SBYV27-200-E3/73

Voltage - Forward (vf) (max) @ If
1.07V @ 3A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
5µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
15ns
Mounting Type
Through Hole
Package / Case
DO-204AC, DO-15, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
1.07 V at 3 A
Recovery Time
15 ns
Forward Continuous Current
2 A
Max Surge Current
50 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SBYV27-200-E3/54

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SBYV27-200-E3/73
Manufacturer:
VISHAY
Quantity:
65 000
Company:
Part Number:
SBYV27-200-E3/73
Quantity:
70 000
Company:
Part Number:
SBYV27-200-E3/73
Quantity:
70 000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88736
Revision: 22-Oct-09
10 000
1000
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
100
0.1
0.1
10
10
1
1
0.2
Fig. 4 - Typical Reverse Leakage Characteristics
0
T
J
Percent of Rated Peak Reverse Voltage (%)
= 125 °C
0.4
Instantaneous Forward Voltage (V)
20
T
J
= 150 °C
0.6
T
T
40
J
J
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
= 125 °C
= 150 °C
T
For technical questions within your region, please contact one of the following:
J
0.8
T
T
= 100 °C
J
J
= 25 °C
= 25 °C
60
1.0
T
J
= 100 °C
80
1.2
100
1.4
0.300 (7.6)
0.230 (5.8)
1.0 (25.4)
1.0 (25.4)
MIN.
MIN.
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
0.140 (3.6)
0.104 (2.6)
DIA.
DIA.
SBYV27-50 thru SBYV27-200
100
10
60
50
40
30
20
10
0
1
0.1
0
DiodesEurope@vishay.com
Vishay General Semiconductor
Fig. 5 - Reverse Switching Charateristics
I
V
F
R
Fig. 6 - Typical Junction Capacitance
= 2.0 A
= 30 V
25
Junction Temperature (°C)
50
Reverse Voltage (V)
1
75
100
10
125
V
dI/dt = 150 A/μs
dI/dt = 100 A/μs
dI/dt = 100 A/μs
dI/dt = 150 A/μs
sig
dI/dt = 20 A/μs
dI/dt = 50 A/μs
dI/dt = 50 A/μs
dI/dt = 20 A/μs
f = 1.0 MHz
T
J
= 50 mV
= 25 °C
150
www.vishay.com
t
Q
rr
p-p
rr
100
175
3

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