EGP20G-E3/54 Vishay, EGP20G-E3/54 Datasheet - Page 3

DIODE 2A 400V 50NS DO-204AC

EGP20G-E3/54

Manufacturer Part Number
EGP20G-E3/54
Description
DIODE 2A 400V 50NS DO-204AC
Manufacturer
Vishay
Datasheets

Specifications of EGP20G-E3/54

Voltage - Forward (vf) (max) @ If
1.25V @ 2A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
5µA @ 400V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-204AC, DO-15, Axial
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1.25 V
Recovery Time
50 ns
Forward Continuous Current
2 A @ Ta=55C
Max Surge Current
75 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EGP20G-E3/54
Manufacturer:
Vishay Semiconductors
Quantity:
4 310
Part Number:
EGP20G-E3/54
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
EGP20G-E3/54
Quantity:
70 000
Document Number: 88583
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.001
0.01
0.01
0.01
100
100
100
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Instantaneous Forward Characteristics
0.1
0.1
0.1
10
10
10
1
1
1
0.2
Fig. 4 - Typical Reverse Leakage Characteristics
0.2
0
EGP20A thru EGP20D
EGP20F and EGP20G
EGP20A thru EGP20D
T
T
J
0.4
J
= 125 °C
Percent of Peak Reverse Voltage (%)
= 125 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Voltage (V)
0.4
20
T
J
0.6
= 150 °C
T
J
= 150 °C
0.8
0.6
40
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
T
T
T
T
J
For technical questions within your region, please contact one of the following:
J
J
J
1.0
= 25 °C
= 150 °C
= 125 °C
= 100 °C
T
T
0.8
60
J
J
1.2
= 25 °C
= 100 °C
T
J
T
= 25 °C
J
1.4
= 100 °C
1.0
80
This datasheet is subject to change without notice.
1.6
100
1.8
1.2
0.001
0.01
140
120
100
100
100
0.1
10
0.1
10
80
60
40
20
0
1
1
0.01
Fig. 6 - Typical Reverse Leakage Characteristics
0.1
0
DiodesEurope@vishay.com
Fig. 8 - Typical Transient Thermal Impedance
EGP20F and EGP20G
Vishay General Semiconductor
Fig. 7 - Typical Junction Capacitance
Percent of Peak Reverse Voltage (%)
EGP20A thru EGP20D
EGP20F and EGP20G
20
EGP20A thru EGP20G
0.1
1
t - Pulse Duration (s)
Reverse Voltage (V)
T
T
T
J
J
J
40
= 150 °C
= 125 °C
= 100 °C
10
1
T
J
60
= 25 °C
www.vishay.com/doc?91000
T
f = 1.0 MHz
V
100
J
sig
10
= 25 °C
= 50 mV
80
www.vishay.com
p-p
1000
100
100
3

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