RS2B-E3/52T Vishay, RS2B-E3/52T Datasheet - Page 3

• Manufacturer Part Number: RS2B-E3/52T
• Description: DIODE SW GPP FAST 2A 100V SMB
• Manufacturer: Vishay

Specifications of RS2B-E3/52T

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 1.3V @ 1.5A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 1.5A
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 100 V
• Forward Voltage Drop: 1.3 V
• Recovery Time: 150 ns
• Forward Continuous Current: 1.5 A
• Max Surge Current: 50 A
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Repetitive Reverse Voltage Vrrm Max: 100V
• Forward Current If(av): 1.5A
• Forward Voltage Vf Max: 1.3V
• Reverse Recovery Time Trr Max: 150ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: RS2B-E3/5BT

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88708
Revision: 11-Apr-08
Figure 3. Typical Instantaneous Forward Characteristics
0.01
100
100
0.1
0.1
10
10
1
1
0.4
0
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
0.6
Instantaneous Forward Voltage (V)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
20
0.060 (1.52)
0.030 (0.76)
T
J
0.8
= 25 °C
40
1.0
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Pulse Width = 300 µs
1 % Duty Cycle
1.2
T
DO-214AA (SMB)
J
60
= 25 °C
0.180 (4.57)
0.160 (4.06)
0.220 (5.59)
0.205 (5.21)
Cathode Band
1.4
T
J
0.008 (0.2)
80
= 125 °C
1.6
0 (0)
1.8
100
0.155 (3.94)
0.130 (3.30)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52) MIN.
0.086 (2.18) MIN.
100
10
1
1
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
Mounting Pad Layout
RS2J to RS2K
0.220 REF.
Reverse Voltage (V)
RS2A thru RS2K
10
0.085 (2.159) MAX.
RS2A to RS2G
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
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100
3