MBRS140TRPBF Vishay, MBRS140TRPBF Datasheet - Page 2

DIODE SCHOTTKY 40V 1A SMB

MBRS140TRPBF

Manufacturer Part Number
MBRS140TRPBF
Description
DIODE SCHOTTKY 40V 1A SMB
Manufacturer
Vishay
Series
-r

Specifications of MBRS140TRPBF

Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
600mV @ 1A
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
100µA @ 40V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
1 A
Max Surge Current
380 A
Configuration
Single
Forward Voltage Drop
0.77 V @ 2 A
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 55 C to + 150 C
Mounting Style
SMD/SMT
Repetitive Reverse Voltage Vrrm Max
40V
Forward Current If(av)
1A
Forward Voltage Vf Max
600mV
Forward Surge Current Ifsm Max
380A
Rectifier Type
Schottky Diode
Peak Rep Rev Volt
40V
Avg. Forward Curr (max)
1
Rev Curr
100uA
Peak Non-repetitive Surge Current (max)
380A
Forward Voltage
0.77V
Operating Temp Range
-55C to 150C
Package Type
SMB
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Compliant
Other names
VS-MBRS140TRPBF
VS-MBRS140TRPBF
VSMBRS140TRPBF
VSMBRS140TRPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBRS140TRPBF
Manufacturer:
IR
Quantity:
45 000
Company:
Part Number:
MBRS140TRPBF
Quantity:
70 000
VS-MBRS140TRPbF
Vishay High Power Products
Note
(1)
Notes
(1)
(2)
www.vishay.com
2
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Maximum reverse leakage current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device
Pulse width < 300 μs, duty cycle < 2 %
Mounted 1" square PCB
dP
------------ -
dT
tot
J
<
------------- -
R
thJA
1
thermal runaway condition for a diode on its own heatsink
For technical questions, contact:
SYMBOL
T
SYMBOL
R
J
V
I
dV/dt
R
RM
(1)
thJL
FM
C
L
thJA
, T
S
T
(1)
(1)
(2)
Stg
Schottky Rectifier, 1.0 A
1 A
2 A
1 A
2 A
T
T
V
Measured lead to lead 5 mm from package body
Rated V
DC operation
See fig. 4
DC operation
Case style SMB (similar to DO-214AA)
J
J
R
= 25 °C
= 125 °C
= 5 V
DC
R
(test signal range 100 kHz to 1 MHz), 25 °C
TEST CONDITIONS
TEST CONDITIONS
diodestech@vishay.com
T
T
V
J
J
R
= 25 °C
= 125 °C
= Rated V
R
- 55 to 150
TYP.
0.52
0.70
0.48
0.63
VALUES
-
-
-
-
-
0.003
Document Number: 94319
0.10
36
80
Revision: 05-Mar-10
10 000
MAX.
0.77
0.53
0.71
V14
0.6
0.1
4.0
2.0
80
UNITS
°C/W
oz.
°C
UNITS
g
V/μs
mA
nH
pF
V

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