SB340A-E3/73 Vishay, SB340A-E3/73 Datasheet - Page 3

• Manufacturer Part Number: SB340A-E3/73
• Description: DIODE SCHOTTKY 40V 3A AXIAL
• Manufacturer: Vishay

Specifications of SB340A-E3/73

• Voltage - Forward (vf) (max) @ If: 500mV @ 3A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 3 A
• Max Surge Current: 80 A
• Configuration: Single
• Forward Voltage Drop: 0.5 V
• Maximum Reverse Leakage Current: 500 uA
• Operating Temperature Range: - 65 C to + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SB340A-E3/54

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88925
Revision: 19-Oct-09
0.0001
0.001
0.01
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
100
0.1
0.1
10
10
1
1
10
0
T
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
J
20
0.2
= 150 °C
Instantaneous Forward Voltage (V)
30
0.4
T
J
T
= 125 °C
J
T
40
= 125 °C
J
T
0.6
J
= 25 °C
= 25 °C
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50
For technical questions within your region, please contact one of the following:
0.8
60
SB320A thru SB340A
SB350A and SB360A
Pulse Width = 300 μs
SB320A thru SB340A
SB350A and SB360A
1.0
1 % Duty Cycle
70
T
1.2
J
= 150 °C
80
1.4
90
100
1.6
0.210 (5.3)
0.190 (4.8)
0.052 (1.32)
0.048 (1.22)
DIA.
DIA.
New Product
DO-201AD
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
1.0 (25.4)
1000
100
100
MIN.
MIN.
10
10
1
0.01
0.1
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Fig. 6 - Typical Transient Thermal Impedance
Vishay General Semiconductor
Fig. 5 - Typical Junction Capacitance
SB320A thru SB340A
SB350A and SB360A
0.1
SB320A thru SB360A
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
10
V
sig
f = 1.0 MHz
10
T
J
= 50 mV
= 25 °C
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p-p
100
100
3