BYG23MHE3/TR Vishay, BYG23MHE3/TR Datasheet - Page 3

• Manufacturer Part Number: BYG23MHE3/TR
• Description: DIODE 1.5A 1000V 75NS DO-214AC
• Manufacturer: Vishay

Specifications of BYG23MHE3/TR

• Diode Type: Avalanche
• Voltage - Forward (vf) (max) @ If: 1.7V @ 1A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 1.5A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Repetitive Reverse Voltage Vrrm Max: 1kV
• Forward Current If(av): 1.5A
• Forward Voltage Vf Max: 1.7V
• Reverse Recovery Time Trr Max: 75ns
• Forward Surge Current Ifsm Max: 30A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Figure 3. Max. Reverse Power Dissipation vs. Junction Temperature
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88962
Revision: 27-Aug-07
1000
160
140
120
100
100
80
60
40
20
Figure 4. Reverse Current vs. Junction Temperature
10
0
1
25
25
V
R
50
50
= V
0.065 (1.65)
0.049 (1.25)
0.060 (1.52)
0.030 (0.76)
Junction Temperature (°C)
0.090 (2.29)
0.078 (1.98)
RRM
R
θJA
R
θJA
= 175 K/W
= 125 K/W
75
75
[e-mail], [e-mail], [e-mail]
For technical questions within your region, please contact one of the following:
100
100
DO-214AC (SMA)
V
100 %
0.177 (4.50)
0.157 (3.99)
0.208 (5.28)
0.194 (4.93)
R
125
125
Cathode Band
= V
RRM
0.008 (0.203)
80 %
0 (0)
150
150
0.110 (2.79)
0.100 (2.54)
0.012 (0.305)
0.006 (0.152)
0.066 (1.68)
26
24
22
20
18
16
14
12
10
0.060 (1.52)
8
6
4
2
0
Figure 5. Diode Capacitance vs. Reverse Voltage
MIN.
0.1
MIN.
Vishay General Semiconductor
Mounting Pad Layout
Reverse Voltage (V)
1
(5.28) REF.
0.208
0.074 (1.88)
10
MAX.
f = 1 MHz
T
J
= 25 °C
BYG23M
www.vishay.com
100
3