RGF1G-E3/67A Vishay, RGF1G-E3/67A Datasheet - Page 3

DIODE GPP 1A 400V 150NS DO214BA

RGF1G-E3/67A

Manufacturer Part Number
RGF1G-E3/67A
Description
DIODE GPP 1A 400V 150NS DO214BA
Manufacturer
Vishay
Datasheet

Specifications of RGF1G-E3/67A

Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.3V @ 1A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 400V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
150ns
Mounting Type
Surface Mount
Package / Case
DO-214BA
Product
Switching Diodes
Peak Reverse Voltage
400 V
Forward Continuous Current
1 A
Max Surge Current
30 A
Configuration
Single
Recovery Time
150 ns
Forward Voltage Drop
1.3 V
Maximum Reverse Leakage Current
5 uA
Operating Temperature Range
- 65 C to + 175 C
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Repetitive Reverse Voltage Vrrm Max
400V
Forward Current If(av)
1A
Forward Voltage Vf Max
1.3V
Reverse Recovery Time Trr Max
150ns
Forward Surge Current Ifsm Max
30A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RGF1G-E3/67A
Manufacturer:
VISHAY
Quantity:
130 000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88697
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
0.01
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
0.1
10
10
1
1
0.4
0
0.030 (0.76)
0.060 (1.52)
0.118 (3.00)
0.100 (2.54)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
0.066 (1.68)
0.040 (1.02)
0.6
Instantaneous Forward Voltage (V)
20
0.8
T
J
40
= 125 °C
DO-214BA (GF1)
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
1.0
T
Pulse Width = 300 µs
1 % Duty Cycle
0.167 (4.24)
J
Cathode Band
0.187 (4.75)
0.226 (5.74)
0.196 (4.98)
= 25 °C
T
T
J
J
0.006 (0.152) TYP.
60
= 100 °C
= 25 °C
0.0065 (0.17)
0.015 (0.38)
1.2
80
1.4
This datasheet is subject to change without notice.
100
1.6
0.114 (2.90)
0.094 (2.39)
0.108 (2.74)
0.098 (2.49)
100
100
0.1
10
10
1
1
0.01
1
0.066 (1.68)
DiodesEurope@vishay.com
Fig. 6 - Typical Transient Thermal Impedance
0.060 (1.52)
Vishay General Semiconductor
MIN.
Fig. 5 - Typical Junction Capacitance
MIN.
0.1
Mounting Pad Layout
t - Pulse Duration (s)
Reverse Voltage (V)
RGF1A thru RGF1M
Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0.220 (5.58)
10
1
REF.
www.vishay.com/doc?91000
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mV
0.076 (1.93)
MAX.
www.vishay.com
p-p
100
100
3

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