BYM12-200-E3/96 Vishay, BYM12-200-E3/96 Datasheet - Page 3
![DIODE UFAST 1A 200V DO-213AB](/photos/16/4/160497/egl41_sml.jpg)
BYM12-200-E3/96
Manufacturer Part Number
BYM12-200-E3/96
Description
DIODE UFAST 1A 200V DO-213AB
Manufacturer
Vishay
Specifications of BYM12-200-E3/96
Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1V @ 1A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 200V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Surface Mount
Package / Case
DO-213AB, Melf
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
1 V
Recovery Time
50 ns
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Repetitive Reverse Voltage Vrrm Max
200V
Forward Current If(av)
1A
Forward Voltage Vf Max
1V
Reverse Recovery Time Trr Max
50ns
Forward Surge Current Ifsm Max
30A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BYM12-200-E3/97
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BYM12-200-E3/96
Manufacturer:
Vishay Semiconductors
Quantity:
8 758
Company:
Part Number:
BYM12-200-E3/96
Manufacturer:
ST
Quantity:
9 440
Part Number:
BYM12-200-E3/96
Manufacturer:
VISHAY/威世
Quantity:
20 000
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88581
Revision: 04-Jul-07
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
A
= 25 °C unless otherwise noted)
Figure 3. Typical Instantaneous Forward Characteristics
0.01
1.0
0.5
5.0
0.1
Figure 1. Maximum Forward Current Derating Curve
30
25
20
15
10
50
10
0
0
1
0.2
0
1
0.4
Resistive or Inductive Load
T
25
j
= 150 °C
Instantaneous Forward Voltage (V)
Pulse Width = 300 µs
1 % Duty Cycle
0.6
Number of Cycles at 60 Hz
50
Lead Temperature (°C)
0.8
75
T
8.3 ms Single Half Sine-Wave
j
= T
1.0
10
j
max.
100
BYM12-50 thru BYM12-400, EGL41A thru EGL41G
1.2
EGL41F - EGL41G
EGL41A - EGL41D
T
125
j
= 25 °C
1.4
150
1.6
175
100
1.8
1000
0.01
100
100
70
60
50
40
30
20
10
0.1
10
0.1
10
0
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
0
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Junction Capacitance
20
0.1
EGL41A - EGL41D
EGL41F - EGL41G
Reverse Voltage (V)
1
t - Pulse Duration (s)
40
T
T
j
j
= 25 °C
= 150 °C
1
T
j
= 100 °C
60
10
T
f = 1.0 MHz
V
j
sig
= 25 °C
10
= 50 mVp-p
80
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100
100
100
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