EGP10D-E3/54 Vishay, EGP10D-E3/54 Datasheet - Page 2

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EGP10D-E3/54

Manufacturer Part Number
EGP10D-E3/54
Description
DIODE 1A 200V 50NS SMC
Manufacturer
Vishay
Datasheets

Specifications of EGP10D-E3/54

Voltage - Forward (vf) (max) @ If
950mV @ 1A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
0.95 V
Recovery Time
50 ns
Forward Continuous Current
1 A @ Ta=55C
Max Surge Current
30 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
EGP10D-E3/73

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EGP10D-E3/54
Manufacturer:
Vishay Semiconductors
Quantity:
5 910
EGP10A thru EGP10G
Vishay General Semiconductor
Note
(1)
Note
(1)
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous
forward voltage
Maximum DC reverse
current at rated DC
blocking voltage
Maximum reverse
recovery time
Typical junction
capacitance
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance
ORDERING INFORMATION (Example)
PREFERRED P/N
EGP10D-E3/54
EGP10D-E3/73
EGP10DHE3/54
EGP10DHE3/73
A
Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted
AEC-Q101 qualified
= 25 °C unless otherwise noted)
1.0
0.5
0
Fig. 1 - Maximum Forward Current Derating Curve
0
0.375" (9.5 mm) Lead Length
Resistive or Inductive Load
25
(1)
(1)
50
Lead Temperature (°C)
UNIT WEIGHT (g)
75
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
1.0 A
I
I
4.0 V, 1 MHz
TEST CONDITIONS
F
rr
For technical questions within your region, please contact one of the following:
= 0.5 A, I
= 0.25 A
0.337
0.337
0.337
0.337
100
T
T
A
A
R
125
= 25 °C
= 125 °C
= 1.0 A,
This datasheet is subject to change without notice.
PREFERRED PACKAGE CODE
150
A
= 25 °C unless otherwise noted)
A
175
SYMBOL
SYMBOL
= 25 °C unless otherwise noted)
R
JA
C
V
t
I
R
rr
F
J
(1)
54
73
54
73
EGP10A
EGP10A
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
EGP10B
EGP10B
30
25
20
15
10
0
5
BASE QUANTITY
1
DiodesEurope@vishay.com
0.95
22
EGP10C
EGP10C
5500
3000
5500
3000
Number of Cycles at 60 Hz
100
5.0
50
50
EGP10D
EGP10D
8.3 ms Single Half Sine-Wave
13" diameter paper tape and reel
13" diameter paper tape and reel
10
Ammo pack packaging
Ammo pack packaging
EGP10F
EGP10F
T
www.vishay.com/doc?91000
DELIVERY MODE
J
= T
Document Number: 88582
J
Max.
1.25
15
Revision: 15-Mar-11
EGP10G
EGP10G
100
UNIT
UNIT
°C/W
μA
pF
ns
V

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