S1PD-E3/85A Vishay, S1PD-E3/85A Datasheet - Page 3
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S1PD-E3/85A
Manufacturer Part Number
S1PD-E3/85A
Description
DIODE GPP 1A 200V SMP DO-220AA
Manufacturer
Vishay
Series
eSMP™r
Datasheet
1.S1PB-M384A.pdf
(5 pages)
Specifications of S1PD-E3/85A
Voltage - Forward (vf) (max) @ If
1.1V @ 1A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
1µA @ 200V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
1.8µs
Mounting Type
Surface Mount
Package / Case
DO-220AA
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
1.1 V
Recovery Time
1800 ns
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
1 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Details
Document Number: 88917
Revision: 07-Jul-09
Figure 3. Maximum Non-Repetitive Peak Forward Surge Current
Figure 4. Typical Instantaneous Forward Characteristics
0.01
0.01
100
100
30
25
20
15
10
0.1
0.1
10
10
Figure 5. Typical Reverse Leakage Characteristics
5
0
1
1
0.4
10
1
Percent of Rated Peak Reverse Voltage (%)
20
0.6
Instantaneous Forward Voltage (V)
T
J
30
= 150 °C
Number of Cycles at 50 Hz
0.8
T
J
40
= 125 °C
1.0
T
J
T
= 150 °C
J
50
= 25 °C
PDD-Americas@vishay.com, PDD-Asia@vishay.com,
For technical questions within your region, please contact one of the following:
10
1.2
T
J
T
60
= 125 °C
J
= 25 °C
1.4
70
1.6
80
1.8
90
100
100
2.0
1000
100
100
10
10
1
1
0.01
0.1
Figure 7. Typical Transient Thermal Impedance
PDD-Europe@vishay.com
Vishay General Semiconductor
Figure 6. Typical Junction Capacitance
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
S1PB thru S1PM
1
10
10
www.vishay.com
100
100
3