MBR1635G ON Semiconductor, MBR1635G Datasheet

MBR1635G

Manufacturer Part Number

MBR1635G

Description

DIODE SCHOTTKY 35V 16A TO220AC

Manufacturer

ON Semiconductor

Series

SWITCHMODE™r

Datasheet

1.MBR1635G.pdf (5 pages)

Specifications of MBR1635G

Voltage - Forward (vf) (max) @ If

630mV @ 16A

Voltage - Dc Reverse (vr) (max)

35V

Current - Average Rectified (io)

16A

Current - Reverse Leakage @ Vr

200µA @ 35V

Diode Type

Schottky

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Mounting Type

Through Hole

Package / Case

TO-220-2, TO-220AC

Product

Schottky Diodes

Peak Reverse Voltage

35 V

Forward Continuous Current

16 A

Max Surge Current

150 A

Configuration

Single

Forward Voltage Drop

0.63 V

Maximum Reverse Leakage Current

200 uA

Operating Temperature Range

- 65 C to + 175 C

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Reverse Recovery Time (trr)

Capacitance @ Vr, F

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

MBR1635GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MBR1635G

Manufacturer:

Quantity:

12 500

Current page: 1 of 5
Download datasheet (102Kb)

MBR1635, MBR1645,

MBRB1645

SWITCHMODEE

Power Rectifiers

16 A, 35 and 45 V

with a platinum barrier metal.

Features

•

Mechanical Characteristics:

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. The heat generated must be less than the thermal conductivity from

MAXIMUM RATINGS

June, 2008 − Rev. 11

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current Delay

Peak Repetitive Forward Current, Per

Non−Repetitive Peak Surge Current

Peak Repetitive Reverse Surge Current

Storage Temperature Range

Operating Junction Temperature (Note 1)

Voltage Rate of Change (Rated V

These state−of−the−art devices use the Schottky Barrier principle

Leads are Readily Solderable

260°C Max. for 10 Seconds

Guard−ring for Stress Protection

Low Forward Voltage

175°C Operating Junction Temperature

Pb−Free Packages are Available

Case: Epoxy, Molded

Weight: 1.9 Grams for TO−220

Finish: All External Surfaces Corrosion Resistant and Terminal

Lead Temperature for Soldering Purposes:

Junction−to−Ambient: dP

(Rated V

Leg

(Rated V

20 kHz, T

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

(2.0 ms, 1.0 kHz)

1.7 Grams for D

, T

, Square Wave,

= 157°C) Total Device

Rating

= 163°C) Total Device

MBR1645 is a Preferred Device

/dT

MBRB1645

PAK

MBR1635

MBR1645

< 1/R

)

qJA

Symbol

dv/dt

F(AV)

RRM

FRM

FSM

RWM

RRM

stg

−65 to +175

10,000

Value

150

1.0

V/ms

Unit

°C

Preferred devices are recommended choices for future use

and best overall value.

MBR1635

MBR1635G

MBR1645

MBR1645G

MBRB1645T4G

Device

B16x5 = Device Code

ORDERING INFORMATION

B1645

http://onsemi.com

= Assembly Location

= Year

= Work Week

= 3 or 4

= Diode Polarity

= Pb−Free Package

= Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Pb−Free)

Package

CASE 221B

TO−220

TO−220AC

TO−220

PLASTIC

CASE 418B

STYLE 3

PAK

Publication Order Number:

PAK

1, 4

800 Units / Rail

50 Units / Rail

DIAGRAMS

Shipping

MARKING

MBR1635/D

AYWWG

B1645G

AYWW

B16x5

Related parts for MBR1635G

MBR1635G Summary of contents

Page 1

... B1645 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping MBR1635 TO−220 50 Units / Rail MBR1635G TO−220 50 Units / Rail (Pb−Free) MBR1645 TO−220 50 Units / Rail MBR1645G TO−220 50 Units / Rail (Pb−Free) 2 MBRB1645T4G D PAK 800 Units / Rail (Pb−Free) Preferred devices are recommended choices for future use and best overall value ...

Page 2

THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance, ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note Amps 125° Amps 25° Maximum Instantaneous Reverse Current (Note 2) (Rated ...

Page 3

T = 125° 100°C 10 7.0 5.0 3.0 2.0 1.0 0 0.2 0.4 0 INSTANTANEOUS FORWARD VOLTAGE (V) F Figure 1. Typical Forward Voltage SQUARE 18 ...

Page 4

... SEATING PLANE 0.13 (0.005 VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS 2 D PAK CASE 418B−04 ISSUE ...

Page 5

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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