MBR10100G ON Semiconductor, MBR10100G Datasheet - Page 2
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MBR10100G
Manufacturer Part Number
MBR10100G
Description
DIODE SCHOTTKY 100V 10A TO220AC
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Specifications of MBR10100G
Voltage - Forward (vf) (max) @ If
800mV @ 10A
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
10A
Current - Reverse Leakage @ Vr
100µA @ 100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
TO-220-2, TO-220AC
Product
Schottky Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
10 A
Max Surge Current
150 A
Configuration
Single
Forward Voltage Drop
0.95 V @ 20 A
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 65 C to + 175 C
Mounting Style
Through Hole
Current, Forward
10 A
Current, Reverse
6 mA
Current, Surge
150 A
Package Type
TO-220AC
Primary Type
Schottky Barrier
Resistance, Thermal, Junction To Case
2 °C/W
Temperature, Junction, Maximum
+175 °C
Temperature, Operating
-65 to +175 °C
Voltage, Forward
0.8 V
Voltage, Reverse
100 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBR10100GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR10100G
Manufacturer:
ON Semiconductor
Quantity:
27 125
Company:
Part Number:
MBR10100G
Manufacturer:
ON Semiconductor
Quantity:
3 950
Part Number:
MBR10100G
Manufacturer:
ON/安森美
Quantity:
20 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Average Rectified Forward Current (Rated V
Peak Repetitive Forward Current
Nonrepetitive Peak Surge Current
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current (Note 2)
Working Peak Reverse Voltage
DC Blocking Voltage
(Rated V
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
(i
(i
(i
(i
(Rated dc Voltage, T
(Rated dc Voltage, T
F
F
F
F
= 10 Amps, T
= 10 Amps, T
= 20 Amps, T
= 20 Amps, T
R
, Square Wave, 20 kHz) T
C
C
C
C
= 125°C)
= 25°C)
= 125°C)
= 25°C)
C
C
= 125°C)
= 25°C)
R
)
Rating
C
= 133°C
R
) T
C
= 133°C
http://onsemi.com
2
R
R
v
i
qJC
qJA
R
F
Symbol
V
V
I
I
dv/dt
I
I
F(AV)
FRM
RRM
T
RWM
FSM
RRM
V
T
stg
R
J
D
/dT
J
1080
80
< 1/R
0.85
0.95
0.10
2.0
0.7
0.8
6.0
*65 to +175
*65 to +175
60
qJA
10,000
.
MBR
1090
150
0.5
90
10
20
10100
100
°C/W
°C/W
V/ms
Unit
mA
°C
°C
V
A
A
A
A
V