MBRS3200T3G ON Semiconductor, MBRS3200T3G Datasheet - Page 3
![DIODE SCHOTTKY 3A 200V SMB](/photos/5/27/52756/do-214aa_smb403a_sml.jpg)
MBRS3200T3G
Manufacturer Part Number
MBRS3200T3G
Description
DIODE SCHOTTKY 3A 200V SMB
Manufacturer
ON Semiconductor
Datasheet
1.MBRS3200T3G.pdf
(4 pages)
Specifications of MBRS3200T3G
Voltage - Forward (vf) (max) @ If
840mV @ 3A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
1mA @ 200V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Schottky Diodes
Peak Reverse Voltage
200 V
Forward Continuous Current
3 A
Max Surge Current
100 A
Configuration
Single
Forward Voltage Drop
0.86 V @ 4 A
Maximum Reverse Leakage Current
1000 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBRS3200T3G
MBRS3200T3GOSTR
MBRS3200T3GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBRS3200T3G
Manufacturer:
ON Semiconductor
Quantity:
20 000
Company:
Part Number:
MBRS3200T3G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MBRS3200T3G
Manufacturer:
ON/安森美
Quantity:
20 000
1000
100
10
0
Typical Capacitance
at 0 V = 209 V
20
40
Figure 5. Typical Capacitance
V
60
R
, REVERSE VOLTAGE (V)
80
100
4.5
3.5
2.5
1.5
0.5
5
4
3
2
1
0
0
120 140
T
f = 1 MHz
C
Figure 7. Forward Power Dissipation
= 25°C
1
I
O
, AVERAGE FORWARD CURRENT (A)
160
http://onsemi.com
180 200
MBRS3200T3
2
3
3
SQUARE WAVE
7
6
5
4
3
2
1
0
80
4
SQUARE WAVE
90
Figure 6. Current Derating − Lead
5
100
T
dc
L
, LEAD TEMPERATURE (°C)
dc
110
6
120
130
140
150
160