MBR745G ON Semiconductor, MBR745G Datasheet - Page 2

DIODE SCHOTTKY 45V 7.5A TO220AC

MBR745G

Manufacturer Part Number
MBR745G
Description
DIODE SCHOTTKY 45V 7.5A TO220AC
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheets

Specifications of MBR745G

Voltage - Forward (vf) (max) @ If
840mV @ 15A
Voltage - Dc Reverse (vr) (max)
45V
Current - Average Rectified (io)
7.5A
Current - Reverse Leakage @ Vr
100µA @ 45V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
TO-220-2, TO-220AC
Product
Schottky Diodes
Peak Reverse Voltage
45 V
Forward Continuous Current
7.5 A
Max Surge Current
150 A
Configuration
Single
Forward Voltage Drop
0.84 V @ 15 A
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 65 C to + 175 C
Mounting Style
Through Hole
Current, Forward
7.5 A
Current, Reverse
10 mA
Current, Surge
1 A
Package Type
TO-220AC
Primary Type
Schottky Barrier
Resistance, Thermal, Junction To Case
3 °C/W
Temperature, Junction, Maximum
+175 °C
Temperature, Operating
-65 to +175 °C
Voltage, Forward
0.48 V
Voltage, Reverse
45 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBR745GOS

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1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(T
Peak Repetitive Forward Current, (Square Wave, 20 kHz, T
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated V
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Maximum Instantaneous Forward Voltage (Note 2)
(i
(i
(i
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
(Rated dc Voltage, T
F
F
F
C
= 7.5 Amps, T
= 15 Amps, T
= 15 Amps, T
= 164°C)
J
J
J
= 125°C)
= 25°C)
= 125°C)
J
J
= 125°C)
= 25°C)
Rating
R
Characteristic
)
Characteristic
http://onsemi.com
C
Per Device
= 168°C)
MBR735
MBR745
2
Symbol
V
V
I
I
I
dv/dt
I
F(AV)
T
FRM
FSM
RRM
RWM
RRM
V
T
stg
R
J
Symbol
v
i
R
F
D
/dT
−65 to +175
−65 to +175
Symbol
R
R
10,000
Value
J
qJC
qJA
Min
150
7.5
7.5
1.0
35
45
< 1/R
qJA
.
0.48
0.61
0.68
0.03
Typ
10
Value
3.0
60
Max
0.57
0.72
0.84
0.1
15
Unit
V/ms
°C
°C
V
A
A
A
A
°C/W
°C/W
Unit
Unit
mA
V

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