MBR3100G ON Semiconductor, MBR3100G Datasheet

MBR3100G

Manufacturer Part Number

MBR3100G

Description

DIODE SCHOTTKY 3A 100V DO-201AD

Manufacturer

ON Semiconductor

Datasheets

1.MBR3100RLG.pdf (4 pages)

2.MBR3100G.pdf (4 pages)

Specifications of MBR3100G

Voltage - Forward (vf) (max) @ If

790mV @ 3A

Voltage - Dc Reverse (vr) (max)

100V

Current - Average Rectified (io)

Current - Reverse Leakage @ Vr

600µA @ 100V

Diode Type

Schottky

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Mounting Type

Through Hole

Package / Case

DO-201AD, Axial

Product

Schottky Diodes

Peak Reverse Voltage

100 V

Forward Continuous Current

3 A @ Ta=100C

Max Surge Current

150 A

Configuration

Single

Forward Voltage Drop

0.79 V

Maximum Reverse Leakage Current

20000 uA

Operating Temperature Range

- 65 C to + 175 C

Mounting Style

SMD/SMT

Current, Forward

3 A

Current, Reverse

20 mA

Current, Surge

150 A

Package Type

DO-201AD

Primary Type

Schottky Barrier

Temperature, Junction, Maximum

+175 °C

Temperature, Operating

-65 to +175 °C

Voltage, Forward

0.79 V

Voltage, Reverse

100 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Reverse Recovery Time (trr)

Capacitance @ Vr, F

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

MBR3100G
MBR3100GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

MBR3100G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 4
Download datasheet (59Kb)

MBR3100

Axial Lead Rectifier

metal−to−silicon power diode. State−of−the−art geometry features

epitaxial construction with oxide passivation and metal overlap

contact. Ideally suited for use as rectifiers in low−voltage,

high−frequency inverters, free wheeling diodes, and polarity

protection diodes.

Features

•

Mechanical Characteristics:

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. The heat generated must be less than the thermal conductivity from

*For additional information on our Pb−Free strategy and soldering details, please

MAXIMUM RATINGS

June, 2006 − Rev. 6

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current T

Note 3)

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

Operating and Storage Junction Temperature

Range (Note 1) (Reverse Voltage Applied)

Voltage Rate of Change (Rated V

This device employs the Schottky Barrier principle in a large area

Leads are Readily Solderable

260°C Max. for 10 Seconds

Low Reverse Current

Low Stored Charge, Majority Carrier Conduction

Low Power Loss/High Efficiency

Highly Stable Oxide Passivated Junction

Guard−ring for Stress Protection

Low Forward Voltage

175°C Operating Junction Temperature

High Surge Capacity

Pb−Free Packages are Available*

Case: Epoxy, Molded

Weight: 1.1 Gram (Approximately)

Finish: All External Surfaces Corrosion Resistant and Terminal

Lead Temperature for Soldering Purposes:

Polarity: Cathode indicated by Polarity Band

Junction−to−Ambient: dP

qJA

= 28°C/W, Refer to P.C. Board Mounting,

Rating

/dT

Preferred Device

< 1/R

)

= 100°C

qJA

Symbol

dv/dt

FSM

RWM

RRM

, T

stg

−65 to

+175

Max

100

150

3.0

V/ns

Unit

°C

Preferred devices are recommended choices for future use

and best overall value.

MBR3100

MBR3100G

MBR3100RL

MBR3100RLG

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Device

3.0 AMPERES, 100 VOLTS

SCHOTTKY BARRIER

ORDERING INFORMATION

(Note: Microdot may be in either location)

MARKING DIAGRAM

http://onsemi.com

RECTIFIER

Axial Lead

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Pb−Free)

Package

YYWWG

MBR

3100

Publication Order Number:

CASE 267−05

AXIAL LEAD

(DO−201AD)

STYLE 1

1500/Tape & Reel

500 Units / Bag

Shipping

MBR3100/D

†

Related parts for MBR3100G

MBR3100G Summary of contents

Page 1

... Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping MBR3100 Axial Lead 500 Units / Bag MBR3100G Axial Lead 500 Units / Bag (Pb−Free) MBR3100RL Axial Lead 1500/Tape & Reel MBR3100RLG Axial Lead 1500/Tape & Reel (Pb−Free) † ...

Page 2

THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient (see Note 3, Mounting Method 3) ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3.0 Amps 25° 3.0 Amps 100° Maximum ...

Page 3

Data shown for thermal resistance junction−to−ambient (R ) for the mountings shown used as typical qJA guideline values for preliminary engineering case the tie point temperature cannot ...

Page 4

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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