1N5820G ON Semiconductor, 1N5820G Datasheet - Page 4

• Manufacturer Part Number: 1N5820G
• Description: DIODE SCHOTTKY 3A 20V DO-201AD
• Manufacturer: ON Semiconductor

Specifications of 1N5820G

• Voltage - Forward (vf) (max) @ If: 475mV @ 3A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 2mA @ 20V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Rectifier Type: Schottky Diode
• Configuration: Single
• Peak Rep Rev Volt: 20V
• Avg. Forward Curr (max): 3
• Rev Curr: 2000uA
• Peak Non-repetitive Surge Current (max): 80A
• Forward Voltage: 0.85@9.4AV
• Operating Temp Range: -65C to 125C
• Package Type: DO-201AD
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2
• Product: Schottky Diodes
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 3 A
• Max Surge Current: 80 A
• Forward Voltage Drop: 0.85 V @ 9.4 A
• Maximum Reverse Leakage Current: 2000 uA
• Operating Temperature Range: - 65 C to + 125 C
• Mounting Style: Through Hole
• Current, Forward: 3 A
• Current, Reverse: 20 mA
• Current, Surge: 80 A
• Primary Type: Schottky Barrier
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -65 to +125 °C
• Voltage, Forward: 0.475 V
• Voltage, Reverse: 20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 1N5820G; 1N5820GOS

runaway must be considered when operating this rectifier at
reverse voltages above 0.1 V
accomplished by use of equation (1).
where T
taking reverse power dissipation and thermal runaway into
consideration. The figures solve for a reference temperature
as determined by equation (2).
Substituting equation (2) into equation (1) yields:
ambient temperature at which thermal runaway occurs or
where T
transition from one boundary condition to the other is
evident on the curves of Figures 1, 2, and 3 as a difference
in the rate of change of the slope in the vicinity of 115°C. The
data of Figures 1, 2, and 3 is based upon dc conditions. For
Reverse power dissipation and the possibility of thermal
Figures 1, 2, and 3 permit easier use of equation (1) by
Inspection of equations (2) and (3) reveals that T
T
T
P
P
R
T
T
A(max)
A(max)
F(AV)
R(AV)
A(max)
J(max)
R
qJA
J
= T
= 125°C, when forward power is zero. The
= Junction-to-ambient thermal resistance
J(max)
= Average forward power dissipation
= Average reverse power dissipation
= Maximum allowable junction temperature
= T
= Maximum allowable ambient temperature
(125°C or the temperature at which thermal
runaway occurs, whichever is lowest)
= T
Table 1. Values for Factor F
*Note that V
†Use line to center tap voltage for V
Square Wave
Sine Wave
J(max)
R
Circuit
* R
Load
* R
* R
qJA
qJA
R(PK)
P
P
RWM
qJA
R(AV)
F(AV)
[ 2.0 V
Resistive
P
F(AV)
. Proper derating may be
NOTE 3 — DETERMINING MAXIMUM RATINGS
0.75
0.5
in(PK)
Half Wave
* R
.
Capacitive*
1N5820, 1N5821, 1N5822
qJA
in.
1.3
1.5
P
R(AV)
R
http://onsemi.com
is the
(2)
(3)
(1)
Resistive
4
0.75
Full Wave, Bridge
0.5
use in common rectifier circuits, Table 1 indicates suggested
factors for an equivalent dc voltage to use for conservative
design, that is:
The factor F is derived by considering the properties of the
various rectifier circuits and the reverse characteristics of
Schottky diodes.
12-volt dc supply using a bridge circuit with capacitive filter
such that I
Voltage = 10 V
**Values given are for the 1N5821. Power is slightly lower
for the 1N5820 because of its lower forward voltage, and
higher for the 1N5822. Variations will be similar for the
MBR-prefix devices, using P
EXAMPLE: Find T
Step 1. Find V
Step 2. Find T
Step 3. Find P
Step 4. Find T
V
Capacitive
R(equiv)
DC
0.65
0.75
= 2.0 A (I
(rms)
@
F(AV)
= V
NV
R
@ V
T
R(equiv).
I (FM)
I (AV)
A(max)
A(max)
from Figure 2. Read T
, R
(FM)
R(equiv)
from Figure 6. **Read P
R
Resistive
qJA
F(AV)
+ 10 and I F(AV) + 1.0 A.
= 9.2 V and R
A(max)
1.0
1.5
Center Tapped*†
from equation (3).
= 108 * (0.85) (40) = 74°C.
Read F = 0.65 from Table 1,
= 40°C/W.
Full Wave,
F
= 1.0 A), I
= (1.41) (10) (0.65) = 9.2 V.
F(AV)
for 1N5821 operated in a
Capacitive
from Figure 6.
qJA
1.3
1.5
(FM)
R
= 40°C/W.
/I
= 108°C
(AV)
F(AV)
= 10, Input
= 0.85 W
(4)