1N5822RLG ON Semiconductor, 1N5822RLG Datasheet - Page 6

• Manufacturer Part Number: 1N5822RLG
• Description: DIODE SCHOTTKY 40V 3A DO201AD
• Manufacturer: ON Semiconductor

Specifications of 1N5822RLG

• Voltage - Forward (vf) (max) @ If: 525mV @ 3A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 2mA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Rectifier Type: Schottky Diode
• Configuration: Single
• Peak Rep Rev Volt: 40V
• Avg. Forward Curr (max): 3
• Rev Curr: 2000uA
• Peak Non-repetitive Surge Current (max): 80A
• Forward Voltage: 0.95@9.4AV
• Operating Temp Range: -65C to 125C
• Package Type: DO-201AD
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 3 A
• Max Surge Current: 80 A
• Forward Voltage Drop: 0.95 V @ 9.4 A
• Maximum Reverse Leakage Current: 2000 uA
• Operating Temperature Range: - 65 C to + 125 C
• Mounting Style: Through Hole
• Current, Forward: 3 A
• Current, Reverse: 20 mA
• Current, Surge: 80 A
• Primary Type: Schottky Barrier
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -65 to +125 °C
• Voltage, Forward: 0.525 V
• Voltage, Reverse: 40 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 1N5822RLGOSTR

for the mountings shown is to be used as typical guideline values
for preliminary engineering, or in case the tie point temperature
cannot be measured.
Figure 6. Forward Power Dissipation 1N5820-22
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
0.1
Data shown for thermal resistance junction-to-ambient (R
Capacitive
Loads
I
SINE WAVE
F(AV)
Mounting
I
I
0.2
Method
(FM)
(AV)
TYPICAL VALUES FOR R
, AVERAGE FORWARD CURRENT (AMP)
1
2
3
NOTE 5 — MOUNTING DATA
+ p (Resistive Load)
0.3
5.0
10
20
0.5
1/8
58
50
Lead Length, L (in)
0.7 1.0
1/4
51
59
28
1/2
53
61
qJA
2.0
IN STILL AIR
3/4
55
63
3.0
SQUARE WAVE
T
J
1N5820, 1N5821, 1N5822
≈ 125°C
°C/W
°C/W
°C/W
R
5.0
qJA
dc
http://onsemi.com
7.0 10
qJA
)
6
resistance for any mounting configuration to be found. For
a given total lead length, lowest values occur when one side
of the rectifier is brought as close as possible to the heat sink.
Terms in the model signify:
T
T
R
R
R
P
P
P
(Subscripts (A) and (K) refer to anode and cathode sides,
respectively.) Values for thermal resistance components
are:
R
R
The maximum lead temperature may be found as follows:
T
where n T
É É É É É É É
É É É É É É É
É É É É É É É É
É É É É É É É É
A
D
F
R
NOTE 4 - APPROXIMATE THERMAL CIRCUIT MODEL
L
L
qS
qL
qJ
qL
qJ
Use of the above model permits junction to lead thermal
= Forward Power Dissipation
= Ambient Temperature
= Lead Temperature
= Total Power Dissipation = P
= Reverse Power Dissipation
= T
= Thermal Resistance, Junction-to-Case
= 10°C/W typically and 16°C/W maximum
= Thermal Resistance, Heatsink to Ambient
= Thermal Resistance, Lead-to-Heatsink
= 42°C/W/in typically and 48°C/W/in maximum
T
R
P.C. Board where available
A(A)
qS(A)
copper surface is small.
J(max)
VECTOR PUSH-IN
Mounting Method 1
Mounting Method 2
TERMINALS T-28
L
T
JL
L
L(A)
* n T
[ R
R
qL(A)
qJL
T
JL
C(A)
L
L
· P
R
qJ(A)
D
T
J
T
É
É
É
É
É
P
R
D
J
qJ(K)
F
= Junction Temperature
T
+ P
C
T
BOARD GROUND
= Case Temperature
C(K)
R
Mounting Method 3
copper surface.
P.C. Board with
2-1/2, x 2-1/2,
L = 1/2″
R
PLANE
qL(K)
T
L(K)
R
T
qS(K)
A(K)