MBRM120ET1G ON Semiconductor, MBRM120ET1G Datasheet - Page 4

• Manufacturer Part Number: MBRM120ET1G
• Description: DIODE SCHOTTKY 1A 20V POWERMITE
• Manufacturer: ON Semiconductor

Specifications of MBRM120ET1G

• Voltage - Forward (vf) (max) @ If: 530mV @ 1A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 10µA @ 20V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: Powermite®
• Product: Schottky Diodes
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Configuration: Single
• Forward Voltage Drop: 0.595 V @ 2 A
• Maximum Reverse Leakage Current: 10 uA
• Operating Temperature Range: - 65 C to + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBRM120ET1G; MBRM120ET1GOSTR

1000
100
10
0
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
T
This graph displays the derated allowable T
where r(t) = Rthja. For other power applications further calculations must be performed.
J
may be calculated from the equation:
2.0
4.0
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
6.0
8.0
10
12
T
14
J
= 25°C
J
J
therefore must include forward and reverse power effects. The allowable operating
due to reverse bias under DC conditions only and is calculated as T
16
T
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
J
= T
http://onsemi.com
18
Jmax
MBRM120E
20
− r(t)(Pf + Pr) where
4
150
148
146
144
Figure 8. Typical Operating Temperature Derating*
0
2.0
V
4.0
R
, DC REVERSE VOLTAGE (VOLTS)
6.0
51°C/W
8.0
10
69°C/W
83.53°C/W
12
14
J
R
= T
tja
96°C/W
Jmax
= 33.72°C/W
16
− r(t)Pr,
18
20