MBR0530T1G ON Semiconductor, MBR0530T1G Datasheet - Page 8

• Manufacturer Part Number: MBR0530T1G
• Description: DIODE SCHOTTKY 30V 0.5A SOD123
• Manufacturer: ON Semiconductor

Specifications of MBR0530T1G

• Voltage - Forward (vf) (max) @ If: 430mV @ 500mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 500mA
• Current - Reverse Leakage @ Vr: 130µA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.5 A
• Max Surge Current: 5.5 A
• Configuration: Single
• Forward Voltage Drop: 0.43 V
• Maximum Reverse Leakage Current: 130 uA
• Operating Temperature Range: - 65 C to + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBR0530T1GOSTR

Final Product/Process Change Notification #16266
SC88 and SC88A
MSQA6V1W5T2G
Test:
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
RSH
ELECTRICAL CHARACTERIZATION PLAN:
Datasheet specifications and product electrical performance will remain unchanged
Characterization of each qual vehicle device will be performed to the following requirements:
ELECTRICAL CHARACTERIZATION RESULTS:
Available upon request
CHANGED PART IDENTIFICATION:
Products assembled with the Copper Wire from the ON Semiconductor facility will have a Finish
Good Date Code representing Work Week 35, 2009 (date code 9) or newer.
Issue Date: 08 Jun 2009
1) Three temperature characterization on 30 units from 3 lots
2) ESD performance ( HBM, MM) on 15 units from 1 lot
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Rev.14 Jun 2007
Interval:
1000 cyc
1008 hrs
96 hrs
Results
0/480
0/240
0/240
0/240
0/6
0/90
Page 8 of 36