MBR0520LT1G ON Semiconductor, MBR0520LT1G Datasheet - Page 8
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MBR0520LT1G
Manufacturer Part Number
MBR0520LT1G
Description
DIODE SCHOTTKY 20V 0.5A SOD123
Manufacturer
ON Semiconductor
Specifications of MBR0520LT1G
Voltage - Forward (vf) (max) @ If
385mV @ 500mA
Voltage - Dc Reverse (vr) (max)
20V
Current - Average Rectified (io)
500mA
Current - Reverse Leakage @ Vr
250µA @ 20V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
SOD-123
Rectifier Type
Schottky Diode
Configuration
Single
Peak Rep Rev Volt
20V
Avg. Forward Curr (max)
0.5
Rev Curr
250uA
Peak Non-repetitive Surge Current (max)
5.5A
Forward Voltage
0.385V
Operating Temp Range
-65C to 125C
Package Type
SOD-123
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2
Product
Schottky Diodes
Peak Reverse Voltage
20 V
Forward Continuous Current
0.5 A
Max Surge Current
5.5 A
Forward Voltage Drop
0.385 V
Maximum Reverse Leakage Current
250 uA
Operating Temperature Range
- 65 C to + 125 C
Mounting Style
SMD/SMT
Current, Forward
0.5 A
Current, Reverse
8 mA
Current, Surge
5.5 A
Primary Type
Schottky Barrier
Temperature, Junction, Maximum
+125 °C
Temperature, Operating
-65 to +125 °C
Voltage, Forward
0.385 V
Voltage, Reverse
20 V
Dc
09+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Compliant
Other names
MBR0520LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR0520LT1G
Manufacturer:
ON Semiconductor
Quantity:
137 714
Company:
Part Number:
MBR0520LT1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
MBR0520LT1G
Manufacturer:
ON
Quantity:
5 119
Part Number:
MBR0520LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Final Product/Process Change Notification #16266
SC88 and SC88A
MSQA6V1W5T2G
Test:
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
RSH
ELECTRICAL CHARACTERIZATION PLAN:
Datasheet specifications and product electrical performance will remain unchanged
Characterization of each qual vehicle device will be performed to the following requirements:
ELECTRICAL CHARACTERIZATION RESULTS:
Available upon request
CHANGED PART IDENTIFICATION:
Products assembled with the Copper Wire from the ON Semiconductor facility will have a Finish
Good Date Code representing Work Week 35, 2009 (date code 9) or newer.
Issue Date: 08 Jun 2009
1) Three temperature characterization on 30 units from 3 lots
2) ESD performance ( HBM, MM) on 15 units from 1 lot
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Rev.14 Jun 2007
Interval:
1000 cyc
1008 hrs
96 hrs
Results
0/480
0/240
0/240
0/240
0/6
0/90
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