BAT54HT1G ON Semiconductor, BAT54HT1G Datasheet

BAT54HT1G

Manufacturer Part Number

BAT54HT1G

Description

DIODE SCHOTTKY DET/SW 30V SOD323

Manufacturer

ON Semiconductor

Datasheets

1.BAT54HT1G.pdf (4 pages)

2.BAT54HT1G.pdf (3 pages)

Specifications of BAT54HT1G

Voltage - Forward (vf) (max) @ If

800mV @ 100mA

Voltage - Dc Reverse (vr) (max)

30V

Current - Average Rectified (io)

200mA (DC)

Current - Reverse Leakage @ Vr

2µA @ 25V

Diode Type

Schottky

Speed

Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr)

5ns

Capacitance @ Vr, F

10pF @ 1V, 1MHz

Mounting Type

Surface Mount

Package / Case

SC-76, SOD-323, UMD2

Product

Schottky Diodes

Peak Reverse Voltage

30 V

Forward Continuous Current

0.2 A

Max Surge Current

0.6 A

Configuration

Single

Recovery Time

5 ns

Forward Voltage Drop

0.8 V @ 0.1 A

Maximum Reverse Leakage Current

2 uA @ 25 V

Operating Temperature Range

- 55 C to + 150 C

Mounting Style

SMD/SMT

Capacitance, Junction

7.6 pF

Current, Forward

200 mA

Package Type

SOD-323

Power Dissipation

200 mW

Primary Type

Schottky Barrier

Speed, Switching

Fast

Temperature, Junction, Maximum

+150 °C

Temperature, Operating

-55 to +150 °C

Time, Recovery

5 ns

Voltage, Forward

0.52 V

Voltage, Reverse

30 V

Rectifier Type

Schottky Diode

Peak Rep Rev Volt

30V

Avg. Forward Curr (max)

0.2A

Rev Curr

2uA

Peak Non-repetitive Surge Current (max)

0.6A

Forward Voltage

0.8V

Operating Temp Range

-55C to 150C

Rev Recov Time

5ns

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

0851

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

BAT54HT1GOSTR

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Price

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Quantity:

Company:

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Part Number:

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Quantity:

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Current page: 1 of 4
Download datasheet (95Kb)

BAT54HT1G

Schottky Barrier Diodes

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 Minimum Pad

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

August, 2010 − Rev. 5

Forward Current (DC)

Non−Repetitive Peak Forward

Current, t

Repetitive Peak Forward Current

Reverse Voltage

Total Device Dissipation FR−5 Board,

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature Range

These Schottky barrier diodes are designed for high speed switching

Pulse Wave = 1 sec, Duty Cycle = 66%

Compliant

Extremely Fast Switching Speed

Low Forward Voltage − 0.35 V (Typ) @ I

Device Marking: JV

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

(Note 1)

Derate above 25°C

= 25°C

< 10 msec

Characteristic

Rating

= 125°C unless otherwise noted)

Symbol

FSM

FRM

= 10 mAdc

, T

qJA

stg

Value

to150

Max

1.57

Max

200

600

300

635

−55

mW/°C

°C/W

Unit

°C

†For information on tape and reel specifications,

BAT54HT1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Device

HOT−CARRIER DETECTOR

AND SWITCHING DIODES

(Note: Microdot may be in either location)

ORDERING INFORMATION

CATHODE

30 VOLT SILICON

MARKING DIAGRAM

http://onsemi.com

SOD−323

(Pb−Free)

Package

= Device Code

= Date Code

= Pb−Free Package

CASE 477

SOD−323

JVM G

Publication Order Number:

ANODE

3000/Tape & Reel

Shipping

BAT54HT1/D

†

Related parts for BAT54HT1G

BAT54HT1G Summary of contents

Page 1

... R 635 °C/W qJA −55 °C J stg to150 Device BAT54HT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com 30 VOLT SILICON AND SWITCHING DIODES 1 2 CATHODE ANODE ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic Reverse Breakdown Voltage ( μA) R Total Capacitance ( 1.0 MHz) R Reverse Leakage ( Forward Voltage (I = 0.1 mAdc) F Forward Voltage (I = ...

Page 3

100 μH F 0.1 μF DUT 50 Ω Output Pulse Generator Notes 2.0 kΩ variable resistor adjusted for a Forward Current (I Notes: 2. Input pulse is adjusted so I Notes: ...

Page 4

... NOTE 5 NOTE 3 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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