BAS21HT1G ON Semiconductor, BAS21HT1G Datasheet - Page 4

DIODE SWITCH 200MA 250V SOD323

BAS21HT1G

Manufacturer Part Number
BAS21HT1G
Description
DIODE SWITCH 200MA 250V SOD323
Manufacturer
ON Semiconductor
Datasheets

Specifications of BAS21HT1G

Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
250V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
100nA @ 200V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SC-76, SOD-323, UMD2
Product
Switching Diodes
Peak Reverse Voltage
250 V
Forward Continuous Current
0.2 A
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
- 55 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Rectifier Type
Small Signal Switching Diode
Peak Rep Rev Volt
250V
Avg. Forward Curr (max)
0.2A
Rev Curr
0.1uA
Forward Voltage
1.25V
Operating Temp Range
-55C to 150C
Package Type
SOD-323
Rev Recov Time
50ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2
Forward Current If(av)
200mA
Repetitive Reverse Voltage Vrrm Max
250V
Forward Voltage Vf Max
1V
Reverse Recovery Time Trr Max
50ns
Forward Surge Current Ifsm Max
625mA
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAS21HT1GOSTR

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Final Product/Process Change Notification #16266
BAT54T1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
MMSZ5254ET1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
HAST+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs HAST
RSH
MMSZ5265BT1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
HAST+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs HAST
RSH
Issue Date: 08 Jun 2009
Ta=130C RH=85% p=~18.8psig
Ta=130C RH=85% p=~18.8psig
Ta=85C RH=85%
bias=80% rated V or100V Max
bias=80% rated V or100V Max
bias=80% rated V or100V Max
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Conditions:
Conditions:
Rev.14 Jun 2007
Interval:
Interval:
Interval:
15000 cyc
15000 cyc
15000 cyc
1008 hrs
1008 hrs
1000 cyc
1000 cyc
1008 hrs
1008 hrs
1000 cyc
1008 hrs
1008 hrs
1008 hrs
96 hrs
96 hrs
96 hrs
96 hrs
96 hrs
Results
0/240
0/960
0/240
0/240
0/240
0/240
0/240
0/6
Results
0/80
0/320
0/80
0/80
0/80
0/80
0/80
0/2
Results
0/160
0/640
0/160
0/160
0/160
0/160
0/160
0/4
0/6
0/90
0/2
0/30
0/4
0/60
Page 4 of 36

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