BAS21HT1G ON Semiconductor, BAS21HT1G Datasheet - Page 3

• Manufacturer Part Number: BAS21HT1G
• Description: DIODE SWITCH 200MA 250V SOD323
• Manufacturer: ON Semiconductor

Specifications of BAS21HT1G

• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 250V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 50ns
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323, UMD2
• Product: Switching Diodes
• Peak Reverse Voltage: 250 V
• Forward Continuous Current: 0.2 A
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Rectifier Type: Small Signal Switching Diode
• Peak Rep Rev Volt: 250V
• Avg. Forward Curr (max): 0.2A
• Rev Curr: 0.1uA
• Forward Voltage: 1.25V
• Operating Temp Range: -55C to 150C
• Package Type: SOD-323
• Rev Recov Time: 50ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Forward Current If(av): 200mA
• Repetitive Reverse Voltage Vrrm Max: 250V
• Forward Voltage Vf Max: 1V
• Reverse Recovery Time Trr Max: 50ns
• Forward Surge Current Ifsm Max: 625mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAS21HT1GOSTR

1200
1000
800
600
400
200
1
1
Figure 2. Forward Voltage
FORWARD CURRENT (mA)
10
T
A
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
= −55°C
0
100
155°C
1
25°C
Figure 4. Diode Capacitance
http://onsemi.com
2
V
R
, REVERSE VOLTAGE (V)
1000
3
3
7000
6000
5000
4000
3000
4
6
5
4
3
2
1
0
1
5
2
6
Figure 3. Reverse Leakage
5
REVERSE VOLTAGE (V)
7
10
8
T
T
T
A
A
A
= 155°C
= −55°C
= 25°C
20
50
100
200
300