RB520S30T1G ON Semiconductor, RB520S30T1G Datasheet - Page 2

• Manufacturer Part Number: RB520S30T1G
• Description: DIODE SCHOTTKY 200MA 30V SOD523
• Manufacturer: ON Semiconductor

Specifications of RB520S30T1G

• Voltage - Forward (vf) (max) @ If: 600mV @ 200mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 1µA @ 10V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Mounting Type: Surface Mount
• Package / Case: SOD-523
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Other names: RB520S30T1GOS; RB520S30T1GOS; RB520S30T1GOSTR

+10 V
200
100
1.0
0.1
50 W Output
10
Generator
0.0
Pulse
820 W
125 °C
0.1
0.1 mF
150 °C
85°C
2 k
Figure 2. Forward Voltage
100 mH
V
F
, FORWARD VOLTAGE (VOLTS)
0.2
25°C
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
Notes:
Notes:
I
F
−40 °C
0.3
14
12
10
DUT
2. Input pulse is adjusted so I
3. t
2
0
8
6
4
Figure 1. Recovery Time Equivalent Test Circuit
0
p
» t
rr
−55°C
0.4
0.1 mF
5
Oscilloscope
50 W Input
Sampling
Figure 4. Total Capacitance
0.5
V
R
, REVERSE VOLTAGE (VOLTS)
http://onsemi.com
10
RB520S30T1
0.6
R(peak)
2
15
V
R
0.001
1000
0.01
is equal to 10 mA.
100
1.0
0.1
10
t
r
INPUT SIGNAL
20
0
T
10%
90%
A
t
p
= 150°C
25
5
Figure 3. Leakage Current
V
t
R
, REVERSE VOLTAGE (VOLTS)
30
10
F
) of 10 mA.
I
I
R
F
15
(I
F
= I
at i
OUTPUT PULSE
R
= 10 mA; measured
R(REC)
20
t
rr
i
R(REC)
= 1 mA)
T
T
T
A
25
A
A
= 1 mA
= 125°C
= 25°C
= 85°C
t
30