DSEI60-12A IXYS, DSEI60-12A Datasheet
DSEI60-12A
Manufacturer Part Number
DSEI60-12A
Description
DIODE FRED 1200V 52A TO-247AD
Manufacturer
IXYS
Datasheet
1.DSEI60-12A.pdf
(2 pages)
Specifications of DSEI60-12A
Voltage - Forward (vf) (max) @ If
2.55V @ 60A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
52A
Current - Reverse Leakage @ Vr
2.2mA @ 1200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
60ns
Mounting Type
Through Hole
Package / Case
TO-247AD
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1200 V
Forward Voltage Drop
2.55 V @ 60 A
Recovery Time
60 ns
Forward Continuous Current
52 A
Max Surge Current
450 A
Reverse Current Ir
2200 uA
Power Dissipation
189 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Vrrm, (v)
1200
Ifavm, D = 0.5, Total, (a)
52
Ifavm, D = 0.5, Per Diode, (a)
52
@ Tc, (°c)
60
Ifrms, (a)
100
Ifsm, 10 Ms, Tvj=45°c, (a)
500
Vf, Max, Tvj =150°c, (v)
1.65
@ If, (a)
60
Trr, Typ, Tvj =25°c, (ns)
40
Irm , Typ, Tvj =100°c, (a)
32
@ -di/dt, (a/µs)
480
Tvjm, (°c)
150
Rthjc, Max, (k/w)
0.66
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSEI60-12A
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
© 2000 IXYS All rights reserved
Fast Recovery
Epitaxial Diode (FRED)
V
V
1200
Symbol
I
I
I
I
I
T
T
T
P
M
Weight
Symbol
I
V
V
r
R
R
R
t
I
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
FRMS
FAVM
FRM
FSM
2
R
rr
RM
T
t
VJ
VJM
stg
RSM
tot
F
T0
thJC
thCK
thJA
d
I
FAVM
ÿÿ
rating includes reverse blocking losses at T
1200
V
T
T
t
T
T
T
T
T
Mounting torque
T
T
T
I
For power-loss calculations only
T
I
V
L £ 0.05 mH; T
Test Conditions
Test Conditions
V
P
F
F
RRM
VJ
C
VJ
VJ
VJ
VJ
C
VJ
VJ
VJ
VJ
R
< 10 ms; rep. rating, pulse width limited by T
= 60 A;
= 1 A; -di/dt = 200 A/ms; V
= 60°C; rectangular, d = 0.5
= 25°C
= 540 V;
= T
= 45°C;
= 150°C; t = 10 ms (50 Hz), sine
= 45°C
= 150°C; t = 10 ms (50 Hz), sine
= 25°C
= 25°C
= 125°C
= T
VJM
VJM
VJ
Type
DSEI 60-12A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
V
V
V
T
T
I
F
VJ
VJ
R
R
R
= 100°C
= 60 A; -di
= V
= 0.8 • V
= 0.8 • V
= 150°C
= 25°C
RRM
F
RRM
RRM
/dt = 480 A/ms
R
VJM
= 30 V; T
, V
R
= 0.8 V
VJ
= 25°C
RRM
, duty cycle d = 0.5
VJM
typ.
0.25
40
32
-40...+150
-40...+150
Characteristic Values
0.8...1.2
Maximum Ratings
1250
1200
1000
100
800
500
540
450
480
950
150
189
A
52
max.
DSEI 60
2.55
1.65
0.66
6
2.2
0.5
2.0
8.3
14
35
60
36
K/W
K/W
K/W
mW
A
A
A
A
Nm
mA
mA
mA
°C
°C
°C
ns
W
A
A
A
A
A
A
A
g
V
V
V
A
2
2
2
2
s
s
s
s
C
A = Anode, C = Cathode
I
V
t
TO-247 AD
Features
Applications
Advantages
FAVM
rr
International standard package
JEDEC TO-247 AD
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
Soft recovery behaviour
Epoxy meets UL 94V-0
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
RRM
RM
C
-values
= 52 A
= 1200 V
= 40 ns
A
C
1 - 2
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DSEI60-12A Summary of contents
Page 1
... A; - £ 0.05 mH 100° rating includes reverse blocking losses at T FAVM Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved DSEI 60 A Maximum Ratings 100 52 800 VJM 500 540 ...
Page 2
... Fig. 1 Forward current versus voltage drop. 1.4 1.2 1 0.8 0 0.4 0.2 0 120 °C 160 T J Fig. 4 Dynamic parameters versus junction temperature. Fig. 7 Transient thermal impedance junction to case. © 2000 IXYS All rights reserved 12 T =100°C VJ µ 540V =60A =120A =60A F I =30A max ...