RB501V-40TE-17 Rohm Semiconductor, RB501V-40TE-17 Datasheet
![DIODE SCHOTTKY 40V 100MA SOD323](/photos/5/26/52643/sc-90_umd2_sml.jpg)
RB501V-40TE-17
Manufacturer Part Number
RB501V-40TE-17
Description
DIODE SCHOTTKY 40V 100MA SOD323
Manufacturer
Rohm Semiconductor
Datasheet
1.RB501V-40TE-17.pdf
(4 pages)
Specifications of RB501V-40TE-17
Voltage - Forward (vf) (max) @ If
550mV @ 100mA
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
100mA
Current - Reverse Leakage @ Vr
30µA @ 10V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Capacitance @ Vr, F
6pF @ 10V, 1MHz
Mounting Type
Surface Mount
Package / Case
SC-90, SOD-323F
Product
Schottky Diodes
Peak Reverse Voltage
45 V
Forward Continuous Current
0.1 A
Max Surge Current
1 A
Configuration
Single
Forward Voltage Drop
0.55 V
Maximum Reverse Leakage Current
30 uA @ 10 V
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RB501V-40TE-17TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RB501V-40TE-17
Manufacturer:
ROHM
Quantity:
36 000
Company:
Part Number:
RB501V-40TE-17
Manufacturer:
Rohm Semiconductor
Quantity:
28 055
Part Number:
RB501V-40TE-17
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Diodes
Shottky barrier diode
RB501V-40
Low current rectification
1) Ultra Small mold type. (UMD2)
2) Low I
3) High reliability.
Silicon epitaxial planer
Fo
Rever
Capacitance between terminals
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz 1cyc)
Junction temperature
Storage temperature
Application
Features
Condtruction
Absolute maximum ratings (Ta=25 C)
Electrical characteristics (Ta=25 C)
rward voltage
se current
R
Parameter
Parameter
Symbol
V
V
Ct
I
F
F
R
1
2
External dimensions (Unit : mm)
Taping dimensions (Unit : mm)
Symbol
Tstg
V
I
V
FSM
Io
Tj
RM
Min.
R
-
-
-
-
Typ.
6.0
-
-
-
-40 to +125
Limits
100
125
Max.
45
40
0.55
0.34
1
30
-
Unit
μA
pF
V
V
Unit
mA
V
V
A
I
I
V
V
F
F
=100mA
=10mA
R
R
=10V
=10V , f=1MHz
Lead size figure (Unit : mm)
Structure
Conditions
Rev.B
RB501V-40
1/3
Related parts for RB501V-40TE-17
RB501V-40TE-17 Summary of contents
Page 1
... Capacitance between terminals External dimensions (Unit : mm) Taping dimensions (Unit : mm) Limits Symbol 100 FSM 125 Tj -40 to +125 Tstg Symbol Min. Typ. Max 0. 0. 6.0 - RB501V-40 Lead size figure (Unit : mm) Structure Unit Unit Conditions I =100mA =10mA =10V μ =10V , f=1MHz pF R Rev.B 1/3 ...
Page 2
... Diodes Electrical characteristic curves (Ta=25 C) RB501V-40 Rev.B 2/3 ...
Page 3
... Diodes RB501V-40 Rev.B 3/3 ...
Page 4
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...