RB520S-40TE61 Rohm Semiconductor, RB520S-40TE61 Datasheet
Home Discrete Semiconductor Products Diodes, Rectifiers - Single RB520S-40TE61
Manufacturer Part Number
RB520S-40TE61
Description
DIODE SCHOTTKY 40V 200MA SOD523
Manufacturer
Rohm Semiconductor
Specifications of RB520S-40TE61
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
550mV @ 100mA
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
10µA @ 40V
Speed
Small Signal =< 200mA (Io), Any Speed
Mounting Type
Surface Mount
Package / Case
SC-79, SOD-523
Repetitive Reverse Voltage Vrrm Max
40V
Forward Current If(av)
200mA
Forward Voltage Vf Max
390mV
Forward Surge Current Ifsm Max
1A
Diode Case Style
SOD-523
No. Of Pins
2
Svhc
No SVHC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
RB520S-40TE61
Diodes
Schottky barrier diode
RB520S-40
Rectifying small power
1) Ultra small power mold type.
2) Low I
3) High reliability
Silicon epitaxial planer
R
Re
A
For
Junct
Storage temperature
Forward voltage
Reverse current
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristic (Ta=25°C)
(EMD2)
verage rectified forward current
everse voltage (repetitive peak)
verse voltage (DC)
ward current surge peak
ion temperature
Parameter
R
Parameter
Symbol
V
I
I
I
R
R
R
F
Taping dimensions (Unit : mm)
Min.
JEITA : SC-79
JEDEC :SOD-523
External dimensions (Unit : mm)
ROHM : EMD2
-
-
-
-
0.8±0.05
0.3±0.05
Symbol
dot (year week factory)
Tstg
V
I
V
FSM
Io
Tj
RM
R
0.95±0.06
4.0±0.1
Typ.
-
-
-
-
0
2.0±0.05
Empty pocket
空ポケット
-40 to +125
Max.
0.39
0.55
10
1
Limits
0.6±0.1
200
125
40
40
1
4.0±0.1
0.12±0.05
φ1.5±0.05
Unit
µA
µA
V
V
I
I
V
V
2.0±0.05
F
F
R
R
=10mA
=100mA
=10V
=40V
Structure
Land size figure
Unit
mA
℃
℃
V
V
A
Conditions
φ0.5
EMD2
Rev.C
RB520S-40
0.8
0.2
0.2±0.05
0.76±0.05
1/3
Related parts for RB520S-40TE61
RB520S-40TE61 Summary of contents
... Limits Symbol 200 1 I FSM 125 Tj -40 to +125 Tstg Min. Typ. Max 0. 0. RB520S-40 Land size figure 0.8 EMD2 Structure 0.2±0.05 φ1.5±0.05 0.2 φ0.5 2.0±0.05 0.76±0.05 Unit ℃ ℃ Conditions Unit V I =10mA =100mA F µA V =10V R V =40V µ ...
... Ifsm 8.3ms 8.3ms 1cyc NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0.3 D=1/2 0.2 Sin(θ＝180 0.1 0.2 0.3 0.4 1000 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS RB520S-40 100 f=1MHｚ REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 50 Ta=25℃ 45 f=1MHz 40 VR=0V n=10pcs AVE:28.2pF 5 ...
... Tj=125℃ T 0.3 D=1/2 0.2 0.1 Sin(θ＝180 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curve (Io-Ta) 0 0.4 D=t/T VR=20V DC T Tj=125℃ 0.3 D=1/2 0.2 0.1 Sin(θ＝180) 0 125 100 CASE TEMPARATURE:Tc(℃) Derating Curve (Io-Tc) RB520S- 125 Rev.C 3/3 ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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