10BQ030TRPBF Vishay, 10BQ030TRPBF Datasheet - Page 2

• Manufacturer Part Number: 10BQ030TRPBF
• Description: DIODE SCHOTTKY 30V 1A SMB
• Manufacturer: Vishay

Specifications of 10BQ030TRPBF

• Voltage - Forward (vf) (max) @ If: 420mV @ 1A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 1 A
• Max Surge Current: 430 A
• Configuration: Single
• Forward Voltage Drop: 0.47 V @ 2 A
• Maximum Reverse Leakage Current: 500 uA
• Operating Temperature Range: - 55 C to + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 10BQ030PBFTR; 10BQ030TRPBF; 10BQ030TRPBFTR; VS-10BQ030PBFTR; VS-10BQ030PBFTR; VS-10BQ030TRPBF; VS10BQ030PBFTR; VS10BQ030TRPBF

Document Number: 94111
10BQ030PbF
Bulletin PD-20783 07/04
Absolute Maximum Ratings
Thermal-Mechanical Specifications
Voltage Ratings
Electrical Specifications
T
T
R
R
wt
(*) dPtot
(**) Mounted 1 inch square PCB
V
V
I
I
E
I
V
V
I
C
L
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle < 2%
F(AV)
FSM
AR
RM
S
J
stg
R
RWM
AS
FM
FM
thJL
thJA
T
dTj
Parameters
Parameters
Max. Junction Temperature Range (*) - 55 to 150
Max. Storage Temperature Range
Max. Thermal Resistance Junction
to Lead
Max. Thermal Resistance Junction
to Ambient
Approximate Weight
Case Style
Device Marking
Parameters
Part number
Max. DC Reverse Voltage (V)
Max. Working Peak Reverse Voltage (V)
Max. Average Forward Current
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 6
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
Max. Junction Capacitance
Typical Series Inductance
(Rated V
Max. Forward Voltage Drop
Max. Forward Voltage Drop
Max. Reverse Leakage Current (1)
<
Rth( j-a)
1
R
)
thermal runaway condition for a diode on its own heatsink
(**)
(1)
(1)
0.10 (0.003) g (oz.)
- 55 to 150
10BQ
10BQ Units
10BQ
10000
0.420
0.470
0.300
0.370
430
200
1.0
3.0
1.0
0.5
5.0
2.0
90
15
25
80
SMB
IR1E
Units
Units
°C/W DC operation
°C/W
V/µs
mA
mA
mA
mJ
nH
°C
°C
pF
A
A
V
V
V
V
Similar DO-214AA
50% duty cycle @ T
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
T
Current decaying linearly to zero in 1 µsec
Frequency limited by T
@ 1A
@ 2A
@ 1A
@ 2A
T
T
T
V
Measured lead to lead 5mm from package body
J
J
J
J
R
= 25 °C, I
= 25 °C
= 100 °C
= 125 °C
= 5V
DC
(test signal range 100KHz to 1Mhz) 25°C
AS
Conditions
= 1A, L = 6mH
Conditions
Conditions
T
T
V
10BQ030PbF
J
J
R
L
= 106 °C, rectangular wave form.
= 25 °C
= 125 °C
= rated V
J
max. Va = 1.5 x Vr typical
30
R
Following any rated
load condition and
with rated V
www.vishay.com
RRM
applied
2