MA3S7810GL Panasonic - SSG, MA3S7810GL Datasheet

DIODE SCHOTTKY 30V 30MA SSMINI

MA3S7810GL

Manufacturer Part Number
MA3S7810GL
Description
DIODE SCHOTTKY 30V 30MA SSMINI
Manufacturer
Panasonic - SSG
Datasheet

Specifications of MA3S7810GL

Voltage - Forward (vf) (max) @ If
1V @ 30mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
30mA (DC)
Current - Reverse Leakage @ Vr
300nA @ 30V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
1ns
Mounting Type
Surface Mount
Package / Case
SS Mini 3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Other names
MA3S7810GLTR
Schottky Barrier Diodes (SBD)
MA3S7810G
Silicon epitaxial planar type
For high speed switching
For wave detection
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: October 2007
• High-density mounting is possible
• Optimum for high frequency rectification because of its short
• Low forward voltage V
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Junction temperature
Storage temperature
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
Detection efficiency
reverse recovery time t
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
3. Absolute frequency of input and output is 2 GHz.
4. * : t
and the leakage of current from the operating equipment.
Parameter
rr
Parameter
measurement circuit
Pulse Generator
(PG-10N)
R
s
*
= 50 Ω
This product complies with the RoHS Directive (EU 2002/95/EC).
rr
F
Bias Application Unit (N-50BU)
and good rectification efficiency
A
Symbol
V
T
I
V
T
I
FM
RM
stg
F
R
a
j
Symbol
Wave Form Analyzer
(SAS-8130)
R
= 25°C ± 3°C
i
V
V
= 50 Ω
C
I
t
η
a
R
rr
F1
F2
t
= 25°C
−55 to +125
Rating
150
125
30
30
30
I
I
V
V
I
I
V
R
F
F
F
rr
R
R
IN
L
= 1 mA
= 30 mA
= I
= 1 mA, R
SKH00202AED
= 3.9 kΩ, C
= 30 V
= 1 V, f = 1 MHz
= 3 V
R
= 10 mA
(peak)
V
Unit
mA
mA
°C
°C
R
V
V
Conditions
L
= 100 Ω
, f = 30 MHz
t
L
r
Input Pulse
10%
t
t
δ = 0.05
= 10 pF
p
r
90%
= 0.35 ns
= 2 µs
t
p
t
■ Package
■ Marking Symbol: M1L
■ Internal Connection
• Code
• Pin Name
SSMini3-F3
1: Anode
2: N.C.
3: Cathode
I
F
I
I
R
F
R
Output Pulse
L
= 10 mA
= 10 mA
= 100 Ω
t
I
rr
rr
Min
= 1 mA
t
1
Typ
3
1.5
1.0
65
2
Max
300
0.4
1.0
Unit
nA
pF
ns
%
V
1

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