B130-13-F Diodes Inc, B130-13-F Datasheet - Page 2
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B130-13-F
Manufacturer Part Number
B130-13-F
Description
DIODE SCHOTTKY 30V 1A SMA
Manufacturer
Diodes Inc
Datasheet
1.B140-13-F.pdf
(5 pages)
Specifications of B130-13-F
Voltage - Forward (vf) (max) @ If
500mV @ 1A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
500µA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F
110pF @ 4V, 1MHz
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
1 A
Max Surge Current
30 A
Configuration
Single
Forward Voltage Drop
0.5 V
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free by exemption / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
B130-FDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
B130-13-F
Manufacturer:
DIODES
Quantity:
50 000
Company:
Part Number:
B130-13-F
Manufacturer:
Diodes Inc
Quantity:
106 705
Part Number:
B130-13-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Typical Thermal Resistance Junction to Terminal (Note 4)
Operating and Storage Temperature Range
Forward Voltage Drop
Leakage Current (Note 5)
Total Capacitance
Notes:
B120/B - B160/B
Document number: DS13002 Rev. 16 - 2
Fig. 1 Typical Forward Characteristics - B120/B thru B140/B
1.0
0.1
10
0.2
4. Thermal Resistance: Junction to terminal, unit mounted on PC board with 5.0 mm
5. Short duration pulse test used to minimize self-heating effect.
T = +75 C
V , INSTANTANEOUS FORWARD VOLTAGE (V)
A
F
T = +125 C
A
°
0.4
°
Characteristic
Characteristic
Characteristic
@T
0.6
A
= 25°C unless otherwise specified
T = +25 C
T = -25 C
A
A
0.8
°
°
B120/B, B130/B, B140/B
@T
@ T
A
= 25°C unless otherwise specified
T
= 130°C
B150/B, B160/B
1.0
1.2
www.diodes.com
Symbol
Symbol
T
V
Symbol
V
V
J,
2 of 5
R(RMS)
R
I
RWM
V
FSM
RRM
I
T
V
C
θ JT
O
I
R
R
STG
F
T
B120/B
B120/B
Fig. 2 Typical Forward Characteristics - B150/B thru B160/B
0.01
1.0
0.1
10
20
14
Min
2
-
-
-
-
-
(0.013 mm thick) copper pads as heat sink.
0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
B130/B
B130/B
T = 125ºC
Typ
A
30
21
-
-
-
-
-
0.2
-65 to +150
Max
B140/B
B140/B
110
0.5
0.7
0.5
10
0.4
1.0
40
28
30
20
T = 25ºC
A
Unit
mA
pF
V
B150/B
B150/B
0.6
50
35
I Pulse Width = 300 ms
F
B120/B - B160/B
I
I
@ Rated V
@ Rated V
V
F
F
R
= 1.0A
= 1.0A
= 4V, f = 1MHz
0.8
Test Condition
B160/B
B160/B
60
42
© Diodes Incorporated
September 2010
R
R
,
,
T
T
1.0
A
A
= 25°C
= 100°C
°C/W
Unit
Unit
°C
V
V
A
A