BAS21DW5T1G ON Semiconductor, BAS21DW5T1G Datasheet - Page 2

• Manufacturer Part Number: BAS21DW5T1G
• Description: DIODE SWITCH 200MA 250V SOT353
• Manufacturer: ON Semiconductor

Specifications of BAS21DW5T1G

• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 250V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 2 Independent
• Mounting Type: Surface Mount
• Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
• Product: Switching Diodes
• Peak Reverse Voltage: 250 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.625 A
• Configuration: Dual Parallel
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Rectifier Type: Small Signal Switching Diode
• Peak Rep Rev Volt: 250V
• Avg. Forward Curr (max): 0.2A
• Rev Curr: 0.1uA
• Peak Non-repetitive Surge Current (max): 0.625A
• Forward Voltage: 1.25V
• Operating Temp Range: -55C to 150C
• Package Type: SC-70
• Rev Recov Time: 50ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAS21DW5T1GOSTR

THERMAL CHARACTERISTICS (SOT−23)
THERMAL CHARACTERISTICS (SC−88A)
2. FR−5 = 1.0
3. Alumina = 0.4
4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS
Thermal Resistance
Junction−to−Ambient (SOT−23)
Power Dissipation (Note 4)
Thermal Resistance −
Junction−to−Ambient
Derate Above 25°C
Operating Junction and Storage Temperature Range
Total Device Dissipation FR−5 Board
Total Device Dissipation Alumina Substrate
Thermal Resistance Junction−to−Ambient
Junction and Storage
Temperature Range
Maximum Junction Temperature
Reverse Voltage Leakage Current
Reverse Breakdown Voltage
Forward Voltage
Diode Capacitance (V
Reverse Recovery Time (I
(Note 2)
T
Derate above 25°C
(Note 3)
T
Derate above 25°C
(V
(V
(V
(V
(V
(V
(I
(I
(I
(I
(I
A
A
BR
BR
BR
F
F
R
R
R
R
R
R
= 25°C
= 25°C
= 100 mAdc)
= 200 mAdc)
= 100 Vdc)
= 150 Vdc)
= 200 Vdc)
= 100 Vdc, T
= 150 Vdc, T
= 200 Vdc, T
= 100 mAdc)
= 100 mAdc)
= 100 mAdc)
0.75
J
J
J
0.3
= 150°C)
= 150°C)
= 150°C)
R
= 0, f = 1.0 MHz)
0.062 in.
F
0.024 in. 99.5% alumina.
= I
Characteristic
R
Characteristic
Characteristic
= 30 mAdc, I
(T
A
= 25°C unless otherwise noted)
R(REC)
= 3.0 mAdc, R
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BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
= 100)
Symbol
Symbol
Symbol
T
T
T
V
R
R
R
J
J
P
P
P
Jmax
, T
, T
C
V
(BR)
qJA
qJA
qJA
I
t
R
rr
D
D
D
F
D
stg
stg
−55 to +150
−55 to +150
Min
120
200
250
−
−
−
−
−
−
−
−
−
−
Max
Max
225
556
300
417
385
328
150
1.8
2.4
3.0
Max
1.25
100
100
100
0.1
0.1
0.1
1.0
5.0
50
−
−
−
mW/°C
mW/°C
mW/°C
°C/W
°C/W
°C/W
Unit
Unit
mW
mW
mW
°C
°C
°C
mAdc
Unit
Vdc
Vdc
pF
ns